TIP145

更新时间： 2024-09-20 22:42:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体电阻器晶体管局域网
页数	文件大小	规格书
4页	54K
描述
Monolithic Construction With Built In Base- Emitter Shunt Resistors

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数据手册

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TIP145 数据手册

TIP145/146/147

Monolithic Construction With Built In Base-

Emitter Shunt Resistors

•

High DC Current Gain : h = 1000 @ V = -4V, I = -5A (Min.)

Industrial Use

Complement to TIP140/141/142

FE CE C

TO-3P

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector-Base Voltage : TIP145

- 60

- 80

- 100

CBO

: TIP146

: TIP147

Collector-Emitter Voltage : TIP145

- 60

- 80

- 100

: TIP146

: TIP147

CEO

EBO

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

- 5

- 10

R1 8kΩ

R2 0.12kΩ

- 15

- 0.5

Collector Dissipation (T =25°C)

125

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

(sus)

Collector-Emitter Sustaining Voltage

CEO

: TIP145

: TIP146

: TIP147

= - 30mA, I = 0

- 60

- 80

- 100

Collector Cut-off Curren

: TIP145

CEO

= - 30V, I = 0

- 2

: TIP146

: TIP147

= - 40V, I = 0

= - 50V, I = 0

Collector Cut-off Current

: TIP145

CBO

= - 60V, I = 0

- 1

: TIP146

: TIP147

= - 80V, I = 0

= - 100V, I = 0

Emitter Cut-off Current

DC Current Gain

= - 5V, I = 0

- 2

EBO

= - 4V,I = - 5A

1000

500

= - 4V, I = - 10A

(sat)

Collector-Emitter Saturation Voltage

= - 5A, I = - 10mA

- 2

- 3

= - 10A, I = - 40mA

(sat)

(on)

Base-Emitter Saturation Voltage

Base-Emitter ON Voltage

Delay Time

= - 10A, I = - 40mA

- 3.5

- 3

= - 4V, I = - 10A

= - 30V, I = - 5A

0.15

0.55

2.5

µs

= -20mA, I = 20mA

Rise Time

R = 6Ω

Storage Time

STG

Fall Time

2.5

Rev. A, February 2000

12 3 4

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