生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.18 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 80 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 500 |
JEDEC-95代码: | TO-218 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
功耗环境最大值: | 125 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP146F | FAIRCHILD |
获取价格 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors | |
TIP146F | SAMSUNG |
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PNP (HIGH DC CURRENT GAIN) | |
TIP146F | TRSYS |
获取价格 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS | |
TIP146FTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
TIP146G | ONSEMI |
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Darlington Complementary Silicon Power Transistors | |
TIP146PNP | CDIL |
获取价格 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS | |
TIP146T | ISC |
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isc Silicon PNP Darlington Power Transistor | |
TIP146T | FAIRCHILD |
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Monolithic Construction With Built In Base-Emitter Shunt Resistors | |
TIP146T | MOSPEC |
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POWER TRANSISTORS(10A,60-100V,80W) | |
TIP146T | SEMIHOW |
获取价格 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors |