5秒后页面跳转
TIP146 PDF预览

TIP146

更新时间: 2024-11-03 22:42:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 237K
描述
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP146 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:80 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JEDEC-95代码:TO-218JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:125 W认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzVCEsat-Max:3 V
Base Number Matches:1

TIP146 数据手册

 浏览型号TIP146的Datasheet PDF文件第2页浏览型号TIP146的Datasheet PDF文件第3页浏览型号TIP146的Datasheet PDF文件第4页浏览型号TIP146的Datasheet PDF文件第5页浏览型号TIP146的Datasheet PDF文件第6页 
Order this document  
by TIP140/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low frequency switching applications.  
High DC Current Gain — Min h  
FE  
= 1000 @ I = 5 A, V = 4 V  
CE  
C
Collector–Emitter Sustaining Voltage — @ 30 mA  
V
V
V
= 60 Vdc (Min) — TIP140, TIP145  
= 80 Vdc (Min) — TIP141, TIP146  
= 100 Vdc (Min) — TIP142, TIP147  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Monolithic Construction with Built–In Base–Emitter Shunt Resistor  
MAXIMUM RATINGS  
*Motorola Preferred Device  
TIP140  
TIP145  
TIP141  
TIP146  
TIP142  
TIP147  
10 AMPERE  
DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60100 VOLTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
125 WATTS  
Collector Current — Continuous  
Peak (1)  
I
C
10  
15  
Base Current — Continuous  
Total Device Dissipation  
@ T = 25 C  
C
I
0.5  
Adc  
B
P
125  
Watts  
D
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Ambient  
R
R
1.0  
θJC  
35.7  
CASE 340D–01  
θJA  
(1) 5 ms,  
10% Duty Cycle.  
DARLINGTON SCHEMATICS  
NPN  
PNP  
COLLECTOR  
COLLECTOR  
TIP140  
TIP141  
TIP142  
TIP145  
TIP146  
TIP147  
BASE  
BASE  
8.0 k  
40  
8.0 k  
40  
EMITTER  
EMITTER  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995

与TIP146相关器件

型号 品牌 获取价格 描述 数据表
TIP146F FAIRCHILD

获取价格

Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP146F SAMSUNG

获取价格

PNP (HIGH DC CURRENT GAIN)
TIP146F TRSYS

获取价格

SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP146FTU FAIRCHILD

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
TIP146G ONSEMI

获取价格

Darlington Complementary Silicon Power Transistors
TIP146PNP CDIL

获取价格

SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP146T ISC

获取价格

isc Silicon PNP Darlington Power Transistor
TIP146T FAIRCHILD

获取价格

Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP146T MOSPEC

获取价格

POWER TRANSISTORS(10A,60-100V,80W)
TIP146T SEMIHOW

获取价格

Monolithic Construction With Built In Base-Emitter Shunt Resistors