是否无铅: | 含铅 | 生命周期: | Obsolete |
零件包装代码: | TO-218 | 包装说明: | CASE 340D-02, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 500 | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 125 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP146F | FAIRCHILD |
获取价格 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors | |
TIP146F | SAMSUNG |
获取价格 |
PNP (HIGH DC CURRENT GAIN) | |
TIP146F | TRSYS |
获取价格 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS | |
TIP146FTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
TIP146G | ONSEMI |
获取价格 |
Darlington Complementary Silicon Power Transistors | |
TIP146PNP | CDIL |
获取价格 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS | |
TIP146T | ISC |
获取价格 |
isc Silicon PNP Darlington Power Transistor | |
TIP146T | FAIRCHILD |
获取价格 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors | |
TIP146T | MOSPEC |
获取价格 |
POWER TRANSISTORS(10A,60-100V,80W) | |
TIP146T | SEMIHOW |
获取价格 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors |