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TIP145TJ69Z PDF预览

TIP145TJ69Z

更新时间: 2024-11-04 15:54:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
4页 101K
描述
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

TIP145TJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.71最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

TIP145TJ69Z 数据手册

 浏览型号TIP145TJ69Z的Datasheet PDF文件第2页浏览型号TIP145TJ69Z的Datasheet PDF文件第3页浏览型号TIP145TJ69Z的Datasheet PDF文件第4页 
TIP145T/146T/147T  
Monolithic Construction With Built In Base-  
Emitter Shunt Resistors  
High DC Current Gain : h = 1000@ V = - 4V, I = - 5A (Min.)  
Industrial Use  
Complement to TIP140T/141T/142T  
FE CE C  
1
TO-220  
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage : TIP145T  
- 60  
- 80  
- 100  
V
V
V
CBO  
: TIP146T  
: TIP147T  
B
Collector-Emitter Voltage : TIP145T  
- 60  
- 80  
- 100  
V
V
V
V
V
: TIP146T  
: TIP147T  
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
- 5  
- 10  
V
A
R1  
R2  
I
I
I
C
E
ꢀ ꢁ  
ꢂ ꢃꢄꢀꢂΩ  
- 15  
A
CP  
B
- 0.5  
A
P
Collector Dissipation (T =25°C)  
80  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP145T  
: TIP146T  
: TIP147T  
I
= - 30mA, I = 0  
- 60  
- 80  
- 100  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP145T  
CEO  
V
V
V
= - 30V, I = 0  
- 2  
- 2  
- 2  
mA  
mA  
mA  
CE  
CE  
CE  
B
: TIP146T  
: TIP147T  
= - 40V, I = 0  
B
= - 50V, I = 0  
B
I
Collector Cut-off Current  
: TIP145T  
CBO  
V
V
V
= - 60V, I = 0  
- 1  
- 1  
- 1  
mA  
mA  
mA  
CB  
CB  
CB  
E
: TIP146T  
: TIP147T  
= - 80V, I = 0  
E
= - 100V, I = 0  
E
I
Emitter Cut-off Current  
DC Current Gain  
V
= - 5V, I = 0  
- 2  
mA  
EBO  
BE  
C
h
V
V
= - 4V, I = - 5A  
1000  
500  
FE  
CE  
CE  
C
= - 4V, I = - 10A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= - 5A, I = - 10mA  
- 2  
- 3  
V
V
CE  
C
C
B
= - 10A, I = - 40mA  
B
V
V
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Delay Time  
I
= - 10A, I = - 40mA  
- 3.5  
- 3  
V
BE  
BE  
C
B
V
V
I
= - 4V, I = - 10A  
V
CE  
C
t
t
t
t
= - 30V, I = - 5A  
0.15  
0.55  
2.5  
µs  
µs  
µs  
µs  
D
CC  
C
= -20mA, I = 20mA  
Rise Time  
B1  
B2  
R
R = 6Ω  
L
Storage Time  
STG  
F
Fall Time  
2.5  
©2000 Fairchild Semiconductor International  
Rev. B, February 2000  

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