TIP146

更新时间： 2024-11-04 07:04:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	94K
描述
isc Silicon PNP Darlington Power Transistor

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技术参数
数据手册

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TIP146 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.54
Base Number Matches：	1

TIP146 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP146

DESCRIPTION

·High DC Current Gain-

: h_FE= 1000(Min)@ I_C= -5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -80V(Min)

·Complement to Type TIP141

APPLICATIONS

·Designed for general purpose amplifier and low

frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-80

-5

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

-10

I_CM

-15

I_B

-0.5

125

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

1.0

℃/W

35.7 ℃/W

Thermal Resistance, Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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