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TIP146TIN/LEAD PDF预览

TIP146TIN/LEAD

更新时间: 2024-11-04 13:14:39
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 265K
描述
Power Bipolar Transistor,

TIP146TIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.75JESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

TIP146TIN/LEAD 数据手册

 浏览型号TIP146TIN/LEAD的Datasheet PDF文件第2页 
TM  
Central  
TIP140 TIP141 TIP142 NPN  
TIP145 TIP146 TIP147 PNP  
Semiconductor Corp.  
SILICON POWER DARLINGTON  
COMPLEMENTARY TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR TIP140,  
TIP145 series types are Complementary Silicon  
Power Darlington Transistors manufactured by  
the epitaxial base process, designed for general  
purpose amplifier and low speed switching  
applications where high gain is required.  
MARKING: FULL PART NUMBER  
TO-218 TRANSISTOR CASE  
MAXIMUM RATINGS: (T =25°C)  
TIP140 TIP141 TIP142  
SYMBOL TIP145 TIP146 TIP147 UNITS  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
60  
60  
80  
100  
100  
V
V
CBO  
CEO  
EBO  
80  
5.0  
V
Continuous Collector Current  
Peak Collector Current  
Base Current  
I
10  
A
C
I
20  
A
CM  
I
0.5  
A
B
Power Dissipation  
P
125  
W
°C  
°C/W  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
1.0  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
mA  
mA  
mA  
V
I
I
I
V
V
V
=Rated V  
1.0  
2.0  
2.0  
CBO  
CEO  
EBO  
CB  
CE  
EB  
CBO  
1
= /  
2
Rated V  
CEO  
=5.0V  
BV  
BV  
BV  
I =30mA (TIP140, TIP145)  
60  
80  
CEO  
CEO  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
F
C
I =30mA (TIP141, TIP146)  
V
C
I =30mA (TIP142, TIP147)  
100  
V
C
V
V
V
V
I =5.0A, I =10mA  
2.0  
3.0  
3.0  
2.8  
V
C
B
I =10A, I =40mA  
V
C
B
V
=4.0V, I =10A  
V
CE  
C
I =10A  
V
F
h
h
V
V
=4.0V, I =5.0A  
1000  
500  
FE  
CE  
C
=4.0V, I =10A  
FE  
CE  
C
t
t
I =10A, I =I =40mA, R =3.0Ω  
0.9  
4.0  
μs  
μs  
on  
C
B1 B2  
L
I =10A, I =I =40mA, R =3.0Ω  
off  
C
B1 B2  
L
R2 (1-August 2008)  

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