5秒后页面跳转
TIP146TIN/LEAD PDF预览

TIP146TIN/LEAD

更新时间: 2024-02-03 10:50:11
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 265K
描述
Power Bipolar Transistor,

TIP146TIN/LEAD 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:TO-3P, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.23
Is Samacsys:N最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):500JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:PNP最大功率耗散 (Abs):125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管元件材料:SILICON
Base Number Matches:1

TIP146TIN/LEAD 数据手册

 浏览型号TIP146TIN/LEAD的Datasheet PDF文件第2页 
TM  
Central  
TIP140 TIP141 TIP142 NPN  
TIP145 TIP146 TIP147 PNP  
Semiconductor Corp.  
SILICON POWER DARLINGTON  
COMPLEMENTARY TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR TIP140,  
TIP145 series types are Complementary Silicon  
Power Darlington Transistors manufactured by  
the epitaxial base process, designed for general  
purpose amplifier and low speed switching  
applications where high gain is required.  
MARKING: FULL PART NUMBER  
TO-218 TRANSISTOR CASE  
MAXIMUM RATINGS: (T =25°C)  
TIP140 TIP141 TIP142  
SYMBOL TIP145 TIP146 TIP147 UNITS  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
60  
60  
80  
100  
100  
V
V
CBO  
CEO  
EBO  
80  
5.0  
V
Continuous Collector Current  
Peak Collector Current  
Base Current  
I
10  
A
C
I
20  
A
CM  
I
0.5  
A
B
Power Dissipation  
P
125  
W
°C  
°C/W  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
1.0  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
mA  
mA  
mA  
V
I
I
I
V
V
V
=Rated V  
1.0  
2.0  
2.0  
CBO  
CEO  
EBO  
CB  
CE  
EB  
CBO  
1
= /  
2
Rated V  
CEO  
=5.0V  
BV  
BV  
BV  
I =30mA (TIP140, TIP145)  
60  
80  
CEO  
CEO  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
F
C
I =30mA (TIP141, TIP146)  
V
C
I =30mA (TIP142, TIP147)  
100  
V
C
V
V
V
V
I =5.0A, I =10mA  
2.0  
3.0  
3.0  
2.8  
V
C
B
I =10A, I =40mA  
V
C
B
V
=4.0V, I =10A  
V
CE  
C
I =10A  
V
F
h
h
V
V
=4.0V, I =5.0A  
1000  
500  
FE  
CE  
C
=4.0V, I =10A  
FE  
CE  
C
t
t
I =10A, I =I =40mA, R =3.0Ω  
0.9  
4.0  
μs  
μs  
on  
C
B1 B2  
L
I =10A, I =I =40mA, R =3.0Ω  
off  
C
B1 B2  
L
R2 (1-August 2008)  

与TIP146TIN/LEAD相关器件

型号 品牌 获取价格 描述 数据表
TIP146TJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
TIP146TLEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP146TTU FAIRCHILD

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP146TU FAIRCHILD

获取价格

PNP Epitaxial Silicon Darlington Transistor
TIP147 FAIRCHILD

获取价格

Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP147 STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP147 MOTOROLA

获取价格

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
TIP147 ONSEMI

获取价格

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
TIP147 Wing Shing

获取价格

SILICON DARLINGTON TRANSISTOR PNP EPITAXIAL(HIGH DC CURRENT GAIN)
TIP147 MOSPEC

获取价格

POWER TRANSISTORS(10A,60-100V,125W)