5秒后页面跳转
TIP146PNP PDF预览

TIP146PNP

更新时间: 2024-01-09 02:38:44
品牌 Logo 应用领域
CDIL 局域网
页数 文件大小 规格书
3页 327K
描述
SILICON PLANAR DARLINGTON POWER TRANSISTORS

TIP146PNP 数据手册

 浏览型号TIP146PNP的Datasheet PDF文件第2页浏览型号TIP146PNP的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
SILICON PLANAR DARLINGTON POWER TRANSISTORS  
TIP140, 141, 142 NPN  
TIP145, 146, 147 PNP  
TO- 3PN Non Isolated  
Plastic Package  
Designed for General Purpose Amplifier and Low Frequency Switching Applications  
ABSOLUTE MAXIMUM RATINGS  
TIP140  
TIP145  
60  
TIP141  
TIP146  
80  
TIP142  
TIP147  
100  
DESCRIPTION  
SYMBOL  
UNIT  
VCBO  
VCEO  
VEB0  
IC  
Collector Base Voltage  
V
V
V
A
A
A
W
60  
80  
100  
Collector Emitter Voltage  
Emitter Base Voltage  
5.0  
10  
Collector Current Continuous  
Collector Current Peak  
*ICM  
IB  
15  
0.5  
Base Current Continuous  
Total Power Dissipation at Tc = 25ºC  
Operating and Storage Junction  
Temperature Range  
PD  
125  
Tj, Tstg  
- 65 to +150  
ºC  
*5ms < 10% Duty Cycle  
THERMAL RESISTANCE  
From Junction to case  
Rth (j-c)  
Rth (j-a)  
1.0  
ºC/W  
ºC/W  
From Junction to Ambient in free air  
35.7  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
TEST CONDITION  
MIN  
TYP MAX  
DESCRIPTION  
SYMBOL  
UNIT  
**VCEO (sus)  
IC =30mA, IB=0  
TIP140/145  
Collector Emitter Sustaining Voltage  
60  
80  
V
V
TIP141/146  
TIP142/147  
100  
V
ICEO  
ICBO  
IEBO  
VCE =1/2 rated VCEO, IB=0  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
2.0  
1.0  
2.0  
mA  
VCB =Rated VCBO, IE=0  
VEB =5.0 V, IC=0  
mA  
mA  
**hFE  
IC =5A, VCE =4V  
1000  
500  
IC =10A, VCE =4 V  
IC =5A, IB=10mA  
IC =10A, IB =40mA  
IC =10A, IB =40mA  
**VCE (sat)  
Collector Emitter Saturation Voltage  
2.0  
3.0  
3.5  
V
V
V
**VBE (sat)  
**VBE (on)  
Base Emitter Saturation Voltage  
Base Emitter On Voltage  
IC =10A, VCE =4 V  
3.0  
V
SWITCHING TIME  
DESCRIPTION  
Delay Time  
TEST CONDITION  
MIN  
TYP MAX  
0.15  
SYMBOL  
UNIT  
ms  
td  
tr  
VCC=30V, IC=5A, IB=20mA,  
Duty Cycle < 2%, IB1=IB2, RC &  
RB varied Tj=25ºC  
0.55  
Rise Time  
ms  
ts  
Storage Time  
Fall Time  
ms  
2.5  
2.5  
tf  
ms  
**Pulsed test : Pulse witdh = 300ms, duty cycle < 2%  
TIP140_147 Rev190706E  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

与TIP146PNP相关器件

型号 品牌 获取价格 描述 数据表
TIP146T ISC

获取价格

isc Silicon PNP Darlington Power Transistor
TIP146T FAIRCHILD

获取价格

Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP146T MOSPEC

获取价格

POWER TRANSISTORS(10A,60-100V,80W)
TIP146T SEMIHOW

获取价格

Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP146T NJSEMI

获取价格

Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220AB
TIP146TIN/LEAD CENTRAL

获取价格

Power Bipolar Transistor,
TIP146TJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
TIP146TLEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP146TTU FAIRCHILD

获取价格

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
TIP146TU FAIRCHILD

获取价格

PNP Epitaxial Silicon Darlington Transistor