Datasheet > TIP141

TIP141

更新时间： 2024-11-03 22:42:15

品牌	Logo	应用领域
POINN		晶体晶体管开关局域网
页数	文件大小	规格书
6页	143K
描述
NPN SILICON POWER DARLINGTONS

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技术参数
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TIP141 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.7
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	10 A
集电极-发射极最大电压：	80 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	500	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

TIP141 数据手册

TIP140, TIP141, TIP142

NPN SILICON POWER DARLINGTONS

DECEMBER 1971 - REVISED MARCH 1997

●

Designed for Complementary Use with

TIP145, TIP146 and TIP147

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C Case Temperature

10 A Continuous Collector Current

Minimum h of 1000 at 4 V, 5 A

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIP140

TIP141

TIP142

TIP140

TIP141

TIP142

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

100

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

0.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

3.5

½LI_C

100

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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与TIP141相关器件

型号	品牌	获取价格	描述	数据表
TIP141F	TRSYS	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP141F	FAIRCHILD	获取价格	Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP141F	CDIL	获取价格	TO-3P Fully Isolated Plastic Package Transistor CDIL
TIP141G	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
TIP141LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic
TIP141LTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
TIP141NPN	CDIL	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP141-S	BOURNS	获取价格	Designed for Complementary Use with TIP145, TIP146 and TIP147
TIP141T	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP141T	TAI-SAW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors

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