Datasheet > TIP141-S

TIP141-S

更新时间： 2024-11-04 12:02:51

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
4页	111K
描述
Designed for Complementary Use with TIP145, TIP146 and TIP147

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TIP141-S 数据手册

TIP140, TIP141, TIP142

NPN SILICON POWER DARLINGTONS

●

Designed for Complementary Use with

TIP145, TIP146 and TIP147

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C CaseTemperature

10 A Continuous Collector Current

Minimum h of 1000 at 4 V, 5 A

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIP140

TIP141

TIP142

TIP140

TIP141

TIP142

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

100

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

0.5

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

125

°C

3.5

½LI_C

100

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

260

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

下载PDF

与TIP141-S相关器件

型号	品牌	获取价格	描述	数据表
TIP141T	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP141T	TAI-SAW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP141T	ISC	获取价格	Silicon NPN Darlington Power Transistor
TIP141T	SEMIHOW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP141T	MOSPEC	获取价格	POWER TRANSISTORS(10A,60-100V,80W)
TIP141T	FAIRCHILD	获取价格	Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP141T	NJSEMI	获取价格	Trans Darlington NPN 80V 10A 3-Pin(3+Tab) TO-220 Bulk
TIP141T_09	FAIRCHILD	获取价格	NPN Epitaxial Silicon Darlington Transistor
TIP141TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP141TTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast