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TIP141TLEADFREE PDF预览

TIP141TLEADFREE

更新时间: 2024-11-04 13:14:39
品牌 Logo 应用领域
CENTRAL 晶体晶体管开关局域网
页数 文件大小 规格书
2页 265K
描述
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

TIP141TLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.39最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):500JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

TIP141TLEADFREE 数据手册

 浏览型号TIP141TLEADFREE的Datasheet PDF文件第2页 
TM  
Central  
TIP140 TIP141 TIP142 NPN  
TIP145 TIP146 TIP147 PNP  
Semiconductor Corp.  
SILICON POWER DARLINGTON  
COMPLEMENTARY TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR TIP140,  
TIP145 series types are Complementary Silicon  
Power Darlington Transistors manufactured by  
the epitaxial base process, designed for general  
purpose amplifier and low speed switching  
applications where high gain is required.  
MARKING: FULL PART NUMBER  
TO-218 TRANSISTOR CASE  
MAXIMUM RATINGS: (T =25°C)  
TIP140 TIP141 TIP142  
SYMBOL TIP145 TIP146 TIP147 UNITS  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
60  
60  
80  
100  
100  
V
V
CBO  
CEO  
EBO  
80  
5.0  
V
Continuous Collector Current  
Peak Collector Current  
Base Current  
I
10  
A
C
I
20  
A
CM  
I
0.5  
A
B
Power Dissipation  
P
125  
W
°C  
°C/W  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
1.0  
J
stg  
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
mA  
mA  
mA  
V
I
I
I
V
V
V
=Rated V  
1.0  
2.0  
2.0  
CBO  
CEO  
EBO  
CB  
CE  
EB  
CBO  
1
= /  
2
Rated V  
CEO  
=5.0V  
BV  
BV  
BV  
I =30mA (TIP140, TIP145)  
60  
80  
CEO  
CEO  
CEO  
CE(SAT)  
CE(SAT)  
BE(ON)  
F
C
I =30mA (TIP141, TIP146)  
V
C
I =30mA (TIP142, TIP147)  
100  
V
C
V
V
V
V
I =5.0A, I =10mA  
2.0  
3.0  
3.0  
2.8  
V
C
B
I =10A, I =40mA  
V
C
B
V
=4.0V, I =10A  
V
CE  
C
I =10A  
V
F
h
h
V
V
=4.0V, I =5.0A  
1000  
500  
FE  
CE  
C
=4.0V, I =10A  
FE  
CE  
C
t
t
I =10A, I =I =40mA, R =3.0Ω  
0.9  
4.0  
μs  
μs  
on  
C
B1 B2  
L
I =10A, I =I =40mA, R =3.0Ω  
off  
C
B1 B2  
L
R2 (1-August 2008)  

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