TIP142F

更新时间： 2024-11-03 22:42:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		电阻器
页数	文件大小	规格书
4页	64K
描述
Monolithic Construction With Built In Base- Emitter Shunt Resistors

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数据手册

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TIP142F 数据手册

TIP140F/141F/142F

Monolithic Construction With Built In Base-

Emitter Shunt Resistors

•

Complement to TIP145F/146F/147F

High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.)

Industrial Use

TO-3PF

1.Base 2.Collector 3.Emitter

NPN Epitaxial Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Value

Units

Collector-Base Voltage : TIP140F

100

CBO

: TIP141F

: TIP142F

Collector-Emitter Voltage : TIP140F

100

: TIP141F

: TIP142F

CEO

EBO

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

R1 8 k Ω

R2 0.12 kΩ

0.5

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

(sus)

Collector-Emitter Sustaining Voltage

CEO

: TIP140F

: TIP141F

: TIP142F

= 30mA, I = 0

100

Collector Cut-off Current

: TIP140F

CEO

= 30V, I = 0

: TIP141F

: TIP142F

= 40V, I = 0

= 50V, I = 0

Collector Cut-off Current

: TIP140F

CBO

= 60V, I = 0

: TIP141F

: TIP142F

= 80V, I = 0

= 100V, I = 0

Emitter Cut-off Current

DC Current Gain

= 5V, I = 0

EBO

= 4V, I = 5A

1000

500

= 4V, I = 10A

(sat)

Collector-Emitter Saturation Voltage

= 5A, I = 10mA

= 10A, I = 40mA

(sat)

(on)

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Delay Time

= 10A, I = 40mA

3.5

= 4V, I = 10A

= 30V, I = 5A

0.15

0.55

2.5

µs

= 20mA, I = -20mA

Rise Time

B 1

R = 6Ω

Storage Time

STG

Fall Time

2.5

Rev. B1, December 2002

12 3 4

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