TIP141T

更新时间： 2024-11-23 07:04:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	230K
描述
Silicon NPN Darlington Power Transistor

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中文翻译

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数据手册

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TIP141T 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

TIP141T

DESCRIPTION

·High DC Current Gain-

: h_FE= 1000(Min)@ I_C= 5A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 80V(Min)

·Complement to Type TIP146T

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current- Continuous

I_CM

I_B

0.5

Collector Power Dissipation

@T_C=25℃

P_C

℃

T_j

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Thermal Resistance, Junction to Case

1.56 ℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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