Datasheet > TIP141T_09

TIP141T_09

更新时间： 2024-02-07 20:56:42

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
5页	314K
描述
NPN Epitaxial Silicon Darlington Transistor

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TIP141T_09 数据手册

July 2009

TIP140T / TIP141T / TIP142T

NPN Epitaxial Silicon Darlington Transistor

Features

• Monolithic Construction With Built In Base-Emitter Shunt Resistors

• High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.)

• Industrial Use

• Complement to TIP145T/146T/147T

Equivalent Circuit

TO-220

1.Base 2.Collector 3.Emitter

R1 ≅ 8kΩ

R2 ≅ 0.12kΩ

Absolute Maximum Ratings * T = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Base Voltage : TIP140T

: TIP141T

: TIP142T

CBO

100

Collector-Emitter Voltage : TIP140T

: TIP141T

: TIP142T

CEO

100

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

EBO

0.5

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

-65 to +150

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

TIP140T / TIP141T / TIP142T Rev. B2

www.fairchildsemi.com

12 3 4 5

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