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TIP142 PDF预览

TIP142

更新时间: 2024-02-24 09:22:36
品牌 Logo 应用领域
伯恩斯 - BOURNS 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
4页 89K
描述
NPN SILICON POWER DARLINGTONS

TIP142 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-3P
包装说明:TO-3P, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.37
最大集电极电流 (IC):10 A集电极-发射极最大电压:100 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:NOT APPLICABLE元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
认证状态:COMMERCIAL表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管元件材料:SILICONBase Number Matches:1

TIP142 数据手册

 浏览型号TIP142的Datasheet PDF文件第2页浏览型号TIP142的Datasheet PDF文件第3页浏览型号TIP142的Datasheet PDF文件第4页 
TIP140, TIP141, TIP142  
NPN SILICON POWER DARLINGTONS  
Designed for Complementary Use with  
TIP145, TIP146 and TIP147  
SOT-93 PACKAGE  
(TOP VIEW)  
125 W at 25°C CaseTemperature  
10 A Continuous Collector Current  
B
C
E
1
2
3
Minimum h of 1000 at 4 V, 5 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRAAA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP140  
TIP141  
TIP142  
TIP140  
TIP141  
TIP142  
60  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
80  
V
100  
60  
VCEO  
80  
V
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
10  
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
15  
A
0.5  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
125  
W
W
mJ  
°C  
°C  
°C  
3.5  
2
½LIC  
100  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
260  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.  
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 ,  
BE(off) = 0, RS = 0.1 , VCC = 20 V.  
V
DECEMBER 1971 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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