TIP142F

更新时间： 2024-11-04 04:11:31

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
2页	60K
描述
SILICON PLANAR DARLINGTON POWER TRANSISTORS

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中文翻译

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技术参数
数据手册

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TIP142F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
最大集电极电流 (IC)：	10 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	500	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	60 W
子类别：	Other Transistors	表面贴装：	YES

TIP142F 数据手册

Transys

Electronics

I M I T E D

SILICON PLANAR DARLINGTON POWER TRANSISTORS

TIP140F, 141F, 142F NPN

TIP145F, 146F, 147F PNP

TO- 3P Fully Isolated

Plastic Package

For use in Power Linear and Switching Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

TIP140F

TIP145F

TIP141F

TIP146F

TIP142F

TIP147F

100

UNIT

V_CBO

V_CEO

V_EB0

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

5.0

Collector Current

I_CM

Collector Peak Current (repetitive)

Base Current

I_B

0.5

Total Power Dissipation @ T_c<25ºC

P_D

Operating And Storage Junction

Temperature Range

T_j, T_stg

- 65 to +150

1.0

ºC

THERMAL RESISTANCE

From Junction to case

R_{th (j-c)}

ºC/W

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

TEST CONDITION

V_CB=Rated V_CBO, I_E=0

V_CE=1/2 rated V_CEO, I_B=0

V_EB=5.0 V, I_C=0

MIN

TYP MAX

DESCRIPTION

SYMBOL

I_CBO

UNIT

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Sustaining Voltage

1.0

2.0

I_CEO

I_EBO

*V_{CEO (sus)}

I_C=30mA, I_B=0

TIP140F/145F

TIP141F/146F

100

TIP142F/147F

*V_{CE (sat)}

I_C=5A, I_B=10mA

I_C=10A, I_B=40mA

I_C=10A, V_CE=4 V

Collector-Emitter Saturation Voltage

2.0

3.0

*V_{BE (on)}

*h_FE

Base-Emitter On Voltage

DC Current Gain

I_C=5A, V_CE=4V

I_C=10A, V_CE=4 V

1000

500

SWITCHING TIME

DESCRIPTION

TEST CONDITION

I_C=10A, I_B1=40mA, I_B2=

- 40mA, R_L=3W

MIN

TYP MAX

SYMBOL

UNIT

t_on

t_off

Turn on time

Turn off time

0.9

4.0

*Pulsed : Pulse duration=200ms, duty cycle=1.5%

中文翻译

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