5秒后页面跳转
捷配首页

Datasheet > TIP141G
TIP141G PDF预览

TIP141G

更新时间： 2024-11-04 04:28:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 91K
描述
Darlington Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

TIP141G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-218包装说明：LEAD FREE, CASE 340D-02, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.98Samacsys Description：Darlington Transistors BIP NPN 10A 80V
外壳连接：COLLECTOR最大集电极电流 (IC)：10 A
集电极-发射极最大电压：80 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：500JEDEC-95代码：TO-247
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：125 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：4 MHz

TIP141G 数据手册

 浏览型号TIP141G的Datasheet PDF文件第2页浏览型号TIP141G的Datasheet PDF文件第3页浏览型号TIP141G的Datasheet PDF文件第4页浏览型号TIP141G的Datasheet PDF文件第5页浏览型号TIP141G的Datasheet PDF文件第6页浏览型号TIP141G的Datasheet PDF文件第7页 
TIP140, TIP141, TIP142,  
(NPN); TIP145, TIP146,  
TIP147, (PNP)  
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
http://onsemi.com  
Designed for general−purpose amplifier and low frequency  
switching applications.  
10 AMPERE  
DARLINGTON  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−100 VOLTS, 125 WATTS  
• High DC Current Gain −  
Min h  
= 1000 @ I  
C
FE  
= 5.0 A, V = 4 V  
CE  
• Collector−Emitter Sustaining Voltage − @ 30 mA  
V
= 60 Vdc (Min) − TIP140, TIP145  
= 80 Vdc (Min) − TIP141, TIP146  
= 100 Vdc (Min) − TIP142, TIP147  
CEO(sus)  
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor  
• Pb−Free Packages are Available*  
SOT−93 (TO−218)  
CASE 340D  
STYLE 1  
MAXIMUM RATINGS  
TIP140 TIP141 TIP142  
TIP145 TIP146 TIP147  
Rating  
Symbol  
Unit  
Collector − Emitter Voltage  
V
60  
60  
80  
80  
100  
100  
Vdc  
CEO  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current  
V
Vdc  
Vdc  
Adc  
CB  
EB  
V
5.0  
MARKING DIAGRAM  
I
C
10  
15  
− Continuous  
− Peak (Note 1)  
Base Current − Continuous  
I
0.5  
Adc  
W
B
Total Power Dissipation  
P
125  
D
AYWWG  
TIP14x  
@ T = 25_C  
C
Operating and Storage  
Junction Temperature Range  
T , T  
−65 to +150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Thermal Resistance,  
Junction−to−Case  
R
1.0  
°C/W  
q
JC  
JA  
Thermal Resistance,  
Junction−to−Ambient  
R
35.7  
°C/W  
q
TIP14x = Device Code  
x
G
= 0, 1, 2, 5, 6, or 7  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. 5 ms, v 10% Duty Cycle.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
TIP140/D  
 
1234567

中文翻译

下载PDF

TIP141G 替代型号

型号 品牌 替代类型 描述 数据表
TIP141 ONSEMI

功能相似

 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
TIP141 STMICROELECTRONICS

功能相似

 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

与TIP141G相关器件

型号 品牌 获取价格 描述 数据表
TIP141LEADFREE CENTRAL

获取价格

 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic
TIP141LTU FAIRCHILD

获取价格

 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
TIP141NPN CDIL

获取价格

 		SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP141-S BOURNS

获取价格

 		Designed for Complementary Use with TIP145, TIP146 and TIP147
TIP141T CENTRAL

获取价格

 		Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP141T TAI-SAW

获取价格

 		Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP141T ISC

获取价格

 		Silicon NPN Darlington Power Transistor
TIP141T SEMIHOW

获取价格

 		Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP141T MOSPEC

获取价格

 		POWER TRANSISTORS(10A,60-100V,80W)
TIP141T FAIRCHILD

获取价格

 		Monolithic Construction With Built In Base- Emitter Shunt Resistors

与TIP141G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证