是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.25 | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 500 | JEDEC-95代码: | TO-218 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 125 W |
最大功率耗散 (Abs): | 125 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | VCEsat-Max: | 3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TIP141G | ONSEMI |
功能相似 |
Darlington Complementary Silicon Power Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP141F | TRSYS |
获取价格 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS | |
TIP141F | FAIRCHILD |
获取价格 |
Monolithic Construction With Built In Base- Emitter Shunt Resistors | |
TIP141F | CDIL |
获取价格 |
TO-3P Fully Isolated Plastic Package Transistor CDIL | |
TIP141G | ONSEMI |
获取价格 |
Darlington Complementary Silicon Power Transistors | |
TIP141LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic | |
TIP141LTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
TIP141NPN | CDIL |
获取价格 |
SILICON PLANAR DARLINGTON POWER TRANSISTORS | |
TIP141-S | BOURNS |
获取价格 |
Designed for Complementary Use with TIP145, TIP146 and TIP147 | |
TIP141T | CENTRAL |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
TIP141T | TAI-SAW |
获取价格 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors |