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TIP140T PDF预览

TIP140T

更新时间: 2024-11-18 21:55:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体电阻器晶体管功率双极晶体管局域网
页数 文件大小 规格书
4页 54K
描述
Monolithic Construction With Built In Base- Emitter Shunt Resistors

TIP140T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.39
Is Samacsys:N其他特性:BUILT IN BIAS RESISTANCE RATIO IS 0.015
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):80 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

TIP140T 数据手册

 浏览型号TIP140T的Datasheet PDF文件第2页浏览型号TIP140T的Datasheet PDF文件第3页浏览型号TIP140T的Datasheet PDF文件第4页 
TIP140T/141T/142T  
Monolithic Construction With Built In Base-  
Emitter Shunt Resistors  
High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.)  
Industrial Use  
Complement to TIP145T/146T/147T  
FE CE C  
TO-220  
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage : TIP140T  
60  
80  
100  
V
V
V
CBO  
: TIP141T  
: TIP142T  
B
Collector-Emitter Voltage : TIP140T  
60  
80  
100  
V
V
V
V
V
: TIP141T  
: TIP142T  
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
5
10  
V
A
R1  
R2  
I
I
I
C
E
R1 8 k  
R2 0.12 k Ω  
15  
A
CP  
B
0.5  
A
P
Collector Dissipation (T =25°C)  
80  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
: TIP140T  
: TIP141T  
: TIP142T  
I
= 30mA, I = 0  
60  
80  
100  
V
V
V
C
B
I
Collector Cut-off Current  
: TIP140T  
CEO  
V
V
V
= 30V, I = 0  
2
2
2
mA  
mA  
mA  
CE  
CE  
CE  
B
: TIP141T  
: TIP142T  
= 40V, I = 0  
B
= 50V, I = 0  
B
I
Collector Cut-off Current  
: TIP140T  
CBO  
V
V
V
= 60V, I = 0  
1
1
1
mA  
mA  
mA  
CB  
CB  
CB  
E
: TIP141T  
: TIP142T  
= 80V, I = 0  
E
= 100V, I = 0  
E
I
Emitter Cut-off Current  
DC Current Gain  
V
= 5V, I = 0  
2
mA  
mA  
EBO  
BE  
C
h
V
V
= 4V, I = 5A  
1000  
500  
FE  
CE  
CE  
C
=4V, I = 10A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= 5A, I = 10mA  
2
3
V
V
CE  
C
C
B
= 10A, I = 40mA  
B
V
V
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Delay Time  
I
= 10A, I = 40mA  
3.5  
3
V
BE  
BE  
C
B
V
V
I
I
= 4V, I = 10A  
V
CE  
C
t
t
t
t
= 30V, I = 5A  
0.15  
0.55  
2.5  
µs  
µs  
µs  
µs  
D
CC  
C
= 20mA  
= -20mA  
Rise Time  
B1  
B2  
R
Storage Time  
STG  
F
R = 6Ω  
L
Fall Time  
2.5  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, December 2002  

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