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TIP140 PDF预览

TIP140

更新时间: 2024-11-03 22:42:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体电阻器晶体管功率双极晶体管
页数 文件大小 规格书
4页 55K
描述
Monolithic Construction With Built In Base- Emitter Shunt Resistors

TIP140 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:TO-3P, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.27
Is Samacsys:N其他特性:BUILT IN BIAS RESISTANCE RATIO IS 0.015
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):500
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

TIP140 数据手册

 浏览型号TIP140的Datasheet PDF文件第2页浏览型号TIP140的Datasheet PDF文件第3页浏览型号TIP140的Datasheet PDF文件第4页 
TIP140/141/142  
Monolithic Construction With Built In Base-  
Emitter Shunt Resistors  
High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.)  
Industrial Use  
Complement to TIP145/146/147  
FE CE C  
TO-3P  
1
1.Base 2.Collector 3.Emitter  
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Equivalent Circuit  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : TIP140  
60  
80  
100  
V
V
V
CBO  
CEO  
EBO  
: TIP141  
: TIP142  
B
Collector-Emitter Voltage : TIP140  
60  
80  
100  
V
V
V
: TIP141  
: TIP142  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
5
10  
V
A
R1  
R2  
I
I
I
C
E
15  
A
R1 8k  
R2 0.12kΩ  
CP  
B
0.5  
A
P
Collector Dissipation (T =25°C)  
125  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
60  
80  
100  
V
V
V
: TIP140  
: TIP141  
: TIP142  
I
= 30mA, I = 0  
C
B
I
Collector Cut-off Current  
: TIP140  
CEO  
2
2
2
mA  
mA  
mA  
V
V
V
= 30V, I = 0  
B
CE  
CE  
CE  
: TIP141  
: TIP142  
= 40V, I = 0  
B
= 50V, I = 0  
B
I
Collector Cut-off Current  
: TIP140  
CBO  
1
1
1
mA  
mA  
mA  
V
V
V
= 60V, I = 0  
E
CB  
CB  
CB  
: TIP141  
: TIP142  
= 80V, I = 0  
E
= 100V, I = 0  
E
2
mA  
I
Emitter Cut-off Current  
DC Current Gain  
V
= 5V, I = 0  
BE C  
EBO  
1000  
500  
h
V
V
= 4V, I = 5A  
C
FE  
CE  
CE  
= 4V, I = 10A  
C
2
3
V
V
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= 5A, I = 10mA  
B
CE  
C
C
= 10A, I = 40mA  
B
3.5  
3
V
V
V
t
(sat)  
(on)  
Base-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Delay Time  
I
= 10A, I = 40mA  
B
BE  
BE  
C
V
V
= 4V, I = 10A  
CE  
C
0.15  
0.55  
2.5  
V
I
= 30V, I = 5A  
µs  
µs  
µs  
µs  
D
CC  
C
= 20mA, I = -20mA  
t
t
t
Rise Time  
B1  
B2  
R
R = 6Ω  
L
Storage Time  
STG  
F
2.5  
Fall Time  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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