Datasheet > TIP140NPN

TIP140NPN

更新时间： 2024-01-18 23:51:44

品牌	Logo	应用领域
CDIL		局域网
页数	文件大小	规格书
3页	327K
描述
SILICON PLANAR DARLINGTON POWER TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TIP140NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON PLANAR DARLINGTON POWER TRANSISTORS

TIP140, 141, 142 NPN

TIP145, 146, 147 PNP

TO- 3PN Non Isolated

Plastic Package

Designed for General Purpose Amplifier and Low Frequency Switching Applications

ABSOLUTE MAXIMUM RATINGS

TIP140

TIP145

TIP141

TIP146

TIP142

TIP147

100

DESCRIPTION

SYMBOL

UNIT

V_CBO

V_CEO

V_EB0

I_C

Collector Base Voltage

100

Collector Emitter Voltage

Emitter Base Voltage

5.0

Collector Current Continuous

Collector Current Peak

*I_CM

I_B

0.5

Base Current Continuous

Total Power Dissipation at T_c= 25ºC

Operating and Storage Junction

Temperature Range

P_D

125

T_j, T_stg

- 65 to +150

ºC

*5ms < 10% Duty Cycle

THERMAL RESISTANCE

From Junction to case

R_{th (j-c)}

R_{th (j-a)}

1.0

ºC/W

From Junction to Ambient in free air

35.7

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

TEST CONDITION

MIN

TYP MAX

DESCRIPTION

SYMBOL

UNIT

**V_{CEO (sus)}

I_C=30mA, I_B=0

TIP140/145

Collector Emitter Sustaining Voltage

TIP141/146

TIP142/147

100

I_CEO

I_CBO

I_EBO

V_CE=1/2 rated V_CEO, I_B=0

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

2.0

1.0

2.0

V_CB=Rated V_CBO, I_E=0

V_EB=5.0 V, I_C=0

**h_FE

I_C=5A, V_CE=4V

1000

500

I_C=10A, V_CE=4 V

I_C=5A, I_B=10mA

I_C=10A, I_B=40mA

**V_{CE (sat)}

Collector Emitter Saturation Voltage

2.0

3.0

3.5

**V_{BE (sat)}

**V_{BE (on)}

Base Emitter Saturation Voltage

Base Emitter On Voltage

I_C=10A, V_CE=4 V

3.0

SWITCHING TIME

DESCRIPTION

Delay Time

TEST CONDITION

MIN

TYP MAX

0.15

SYMBOL

UNIT

t_d

t_r

V_CC=30V, I_C=5A, I_B=20mA,

Duty Cycle < 2%, I_B1=I_B2, R_C&

R_Bvaried T_j=25ºC

0.55

Rise Time

t_s

Storage Time

Fall Time

2.5

t_f

**Pulsed test : Pulse witdh = 300ms, duty cycle < 2%

TIP140_147 Rev190706E

Data Sheet

Page 1 of 3

Continental Device India Limited

12 3

中文翻译

下载PDF

与TIP140NPN相关器件

型号	品牌	获取价格	描述	数据表
TIP140P	NJSEMI	获取价格	Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-218 Box
TIP140T	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP140T	SEMIHOW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP140T	MOSPEC	获取价格	POWER TRANSISTORS(10A,60-100V,80W)
TIP140T	FAIRCHILD	获取价格	Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP140T	NJSEMI	获取价格	Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-220AB
TIP140T_09	FAIRCHILD	获取价格	NPN Epitaxial Silicon Darlington Transistor
TIP140T_11	TAI-SAW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP140TIN/LEAD	CENTRAL	获取价格	Power Bipolar Transistor,
TIP140TLEADFREE	CENTRAL	获取价格	暂无描述