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TIP140G PDF预览

TIP140G

更新时间: 2024-01-26 16:30:30
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
7页 91K
描述
Darlington Complementary Silicon Power Transistors

TIP140G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.76
JESD-609代码:e0峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Tin/Lead (Sn/Pb)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

TIP140G 数据手册

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TIP140, TIP141, TIP142,  
(NPN); TIP145, TIP146,  
TIP147, (PNP)  
TIP141, TIP142, TIP146, and TIP147 are Preferred Devices  
Darlington Complementary  
Silicon Power Transistors  
http://onsemi.com  
Designed for general−purpose amplifier and low frequency  
switching applications.  
10 AMPERE  
DARLINGTON  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−100 VOLTS, 125 WATTS  
High DC Current Gain −  
Min h  
= 1000 @ I  
C
FE  
= 5.0 A, V = 4 V  
CE  
Collector−Emitter Sustaining Voltage − @ 30 mA  
V
= 60 Vdc (Min) − TIP140, TIP145  
= 80 Vdc (Min) − TIP141, TIP146  
= 100 Vdc (Min) − TIP142, TIP147  
CEO(sus)  
Monolithic Construction with Built−In Base−Emitter Shunt Resistor  
Pb−Free Packages are Available*  
SOT−93 (TO−218)  
CASE 340D  
STYLE 1  
MAXIMUM RATINGS  
TIP140 TIP141 TIP142  
TIP145 TIP146 TIP147  
Rating  
Symbol  
Unit  
Collector − Emitter Voltage  
V
60  
60  
80  
80  
100  
100  
Vdc  
CEO  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current  
V
Vdc  
Vdc  
Adc  
CB  
EB  
V
5.0  
MARKING DIAGRAM  
I
C
10  
15  
− Continuous  
− Peak (Note 1)  
Base Current − Continuous  
I
0.5  
Adc  
W
B
Total Power Dissipation  
P
125  
D
AYWWG  
TIP14x  
@ T = 25_C  
C
Operating and Storage  
Junction Temperature Range  
T , T  
−65 to +150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Thermal Resistance,  
Junction−to−Case  
R
1.0  
°C/W  
q
JC  
JA  
Thermal Resistance,  
Junction−to−Ambient  
R
35.7  
°C/W  
q
TIP14x = Device Code  
x
G
= 0, 1, 2, 5, 6, or 7  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. 5 ms, v 10% Duty Cycle.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
TIP140/D  
 

TIP140G 替代型号

型号 品牌 替代类型 描述 数据表
TIP140 ONSEMI

类似代替

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
TIP140 CENTRAL

功能相似

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

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