Datasheet > TIP140_05

TIP140_05

更新时间： 2024-11-23 04:28:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	91K
描述
Darlington Complementary Silicon Power Transistors

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中文翻译

获取价格

数据手册

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TIP140_05 数据手册

TIP140, TIP141, TIP142,

(NPN); TIP145, TIP146,

TIP147, (PNP)

TIP141, TIP142, TIP146, and TIP147 are Preferred Devices

Darlington Complementary

Silicon Power Transistors

http://onsemi.com

Designed for general−purpose amplifier and low frequency

switching applications.

10 AMPERE

DARLINGTON

Features

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−100 VOLTS, 125 WATTS

• High DC Current Gain −

Min h

= 1000 @ I

= 5.0 A, V = 4 V

• Collector−Emitter Sustaining Voltage − @ 30 mA

= 60 Vdc (Min) − TIP140, TIP145

= 80 Vdc (Min) − TIP141, TIP146

= 100 Vdc (Min) − TIP142, TIP147

CEO(sus)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Pb−Free Packages are Available*

SOT−93 (TO−218)

CASE 340D

STYLE 1

MAXIMUM RATINGS

TIP140 TIP141 TIP142

TIP145 TIP146 TIP147

Rating

Symbol

Unit

Collector − Emitter Voltage

100

Vdc

CEO

Collector − Base Voltage

Emitter − Base Voltage

Collector Current

Vdc

Adc

5.0

MARKING DIAGRAM

− Continuous

− Peak (Note 1)

Base Current − Continuous

0.5

Adc

Total Power Dissipation

125

AYWWG

TIP14x

@ T = 25_C

Operating and Storage

Junction Temperature Range

T , T

−65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

= Assembly Location

= Year

= Work Week

Thermal Resistance,

Junction−to−Case

1.0

°C/W

Thermal Resistance,

Junction−to−Ambient

35.7

°C/W

TIP14x = Device Code

= 0, 1, 2, 5, 6, or 7

= Pb−Free Package

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. 5 ms, v 10% Duty Cycle.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 5

TIP140/D

12 3 4 5 6 7

中文翻译

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与TIP140_05相关器件

型号	品牌	获取价格	描述	数据表
TIP140F	TRSYS	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140F	FAIRCHILD	获取价格	Monolithic Construction With Built In Base- Emitter Shunt Resistors
TIP140F	CDIL	获取价格	TO-3P Fully Isolated Plastic Package Transistor CDIL
TIP140G	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
TIP140LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic
TIP140NPN	CDIL	获取价格	SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140P	NJSEMI	获取价格	Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-218 Box
TIP140T	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP140T	SEMIHOW	获取价格	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TIP140T	MOSPEC	获取价格	POWER TRANSISTORS(10A,60-100V,80W)

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