Datasheet > TIP121

TIP121

更新时间： 2024-11-03 22:42:15

品牌	Logo	应用领域
德欧泰克 - DIOTEC		/
页数	文件大小	规格书
2页	50K
描述
Si-Epitaxial PlanarTransistors

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中文翻译

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数据手册

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TIP121 数据手册

TIP120, TIP121, TIP122

NPN

Darlington Transistors

NPN

Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren

Version 2004-06-21

Collector current – Kollektorstrom

5 A

Plastic case

TO-220AB

Kunststoffgehäuse

Weight approx. – Gewicht ca.

2.2 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

1 = B1 2 = C2 3 = E2

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

TIP120

60 V

TIP121

80 V

TIP122

100 V

Collector-Emitter-voltage

Collector-Base-voltage

Emitter-Base-voltage

B open

E open

C open

V_CE0

V_CB0

V_EB0

60 V

80 V

50 V

Power dissipation – Verlustleistung

without cooling – ohne Kühlung

with cooling – mit Kühlung

P_tot

2 W ¹)

65 W

T_C= 25°C P_tot

I_C

Peak Collector current – Kollektor-Spitzenstrom I_CM

Collector current – Kollektorstrom (dc)

5 A

8 A

Base current – Basisstrom (dc)

I_B

T_j

T_S

120 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

- 65…+ 150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Min.

Typ.

Max.

Collector-Emitter cutoff current – Kollektorreststrom

I_B= 0, V_CE= 30 V

I_B= 0, V_CE= 40 V

I_B= 0, V_CE= 50 V

TIP120

TIP121

TIP123

I_CE0

–

500 nA

Collector-Base cutoff current – Kollektorreststrom

I_E= 0, V_CB= 60 V

I_E= 0, V_CB= 80 V

I_E= 0, V_CB= 100 V

TIP120

TIP121

TIP122

I_CB0

–

200 nA

)

Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

中文翻译

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