Datasheet > TIP121(TO-220)

TIP121(TO-220)

更新时间： 2023-02-26 14:33:20

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TIP121(TO-220) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

TIP120,121,122 Darlington TRANSISTOR (NPN)

TO-220

TIP125,126,127 Darlington TRANSISTOR (PNP)

1.BASE

2.COLLECTOR

3.EMITTER

FEATURES

Medium Power Complementary silicon transistors

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

TIP120

TIP125

TIP121

TIP126

TIP122

TIP127

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

100

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

Junction Temperature

P_C

R_θJA

R_θJc

T_J

62.5

1.92

150

℃/W

℃

T_stg

Storage Temperature

-55to+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage TIP120,TIP125

TIP121,TIP126

V(BR)_CBO

I_C= 1mA,I_E=0

TIP122,TIP127

100

Collector-emitter breakdown voltage TIP120,TIP125

TIP121,TIP126 V_CEO(SUS) I_C= 30mA,I_B=0

TIP122,TIP127

100

Collector cut-off current

TIP120,TIP125

TIP121,TIP126

TIP122,TIP127

V_CB= 60 V, I_E=0

I_CBO

_CB= 80 V, I_E=0

_CB= 100V, I_E=0

0.2

TIP120,TIP125

V_CE=30 V, I_B=0

TIP121,TIP126

TIP122,TIP127

I_CEO

_CE=40 V, I_B=0

_CE=50 V, I_B=0

0.5

Emitter cut-off current

DC current gain

I_EBO

h_FE(1)

h_FE(2)

V_EB=5 V, I_C=0

V_CE= 3V, I_C=0.5A

V_CE= 3V, I_C=3 A

1000

I_C=3A,I_B=12mA

I_C=5 A,I_B=20mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

V_CE=3V, I_C=3 A

2.5

Output Capacitance

TIP125,TIP126,TIP127

TIP120,TIP121,TIP122

300

200

Cob

V_CB=10V, I_E=0,f=0.1MHz

A,Mar,2011

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