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TIP121AF PDF预览

TIP121AF

更新时间: 2024-11-19 13:00:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 91K
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TIP121AF 数据手册

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TIP120, TIP121, TIP122  
(NPN); TIP125, TIP126,  
TIP127 (PNP)  
Preferred Devices  
Plastic Medium−Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
Designed for general−purpose amplifier and low−speed switching  
applications.  
DARLINGTON  
5 AMPERE  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60−80−100 VOLTS, 65 WATTS  
High DC Current Gain −  
h
= 2500 (Typ) @ I  
= 4.0 Adc  
FE  
C
Collector−Emitter Sustaining Voltage − @ 100 mAdc  
V
= 60 Vdc (Min) − TIP120, TIP125  
= 80 Vdc (Min) − TIP121, TIP126  
= 100 Vdc (Min) − TIP122, TIP127  
MARKING  
DIAGRAM  
CEO(sus)  
4
Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 2.0 Vdc (Max) @ I = 3.0 Adc  
C
= 4.0 Vdc (Max) @ I = 5.0 Adc  
C
TO−220AB  
TIP12xG  
AYWW  
Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
Pb−Free Packages are Available*  
CASE 221A  
STYLE 1  
1
2
3
TIP12x = Device Code  
x
A
Y
= 0, 1, 2, 5, 6, or 7  
= Assembly Location  
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
TIP120/D  

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