SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose amplifier and low–speed switching applications.
•
High DC Current Gain —
= 2500 (Typ) @ I = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc
h
FE
C
•
V
V
V
= 60 Vdc (Min) — TIP120, TIP125
= 80 Vdc (Min) — TIP121, TIP126
= 100 Vdc (Min) — TIP122, TIP127
CEO(sus)
CEO(sus)
CEO(sus)
•
Low Collector–Emitter Saturation Voltage —
V
V
= 2.0 Vdc (Max) @ I = 3.0 Adc
CE(sat)
CE(sat)
C
= 4.0 Vdc (Max) @ I = 5.0 Adc
C
•
•
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
TO–220AB Compact Package
*Motorola Preferred Device
*MAXIMUM RATINGS
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–80–100 VOLTS
65 WATTS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
60
60
80
80
100
100
V
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
5.0
8.0
Base Current
I
B
120
mAdc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
65
0.52
Watts
W/ C
Total Power Dissipation @ T = 25 C
A
Derate above 25 C
P
D
2.0
0.016
Watts
W/ C
Unclamped Inductive Load Energy (1)
E
50
mJ
C
Operating and Storage Junction,
Temperature Range
T , T
–65 to +150
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
1.92
62.5
CASE 221A–06
TO–220AB
θJC
R
θJA
= 20 V, R = 100 Ω.
BE
(1) I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V
C
CC
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
3–900
Motorola Bipolar Power Transistor Device Data