Datasheet > TIP122

TIP122

更新时间： 2024-11-18 08:48:47

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描述
PNP/NPN Silicon Power Transistor

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中文翻译

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数据手册

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TIP122 数据手册

TIP120 Series

PNP/NPN Silicon Power Transistor

P b

Lead(Pb)-Free

FEATURES:

* Medium Power Complementary silicon transistors

* TIP120,121,122 Darlington TRANSISTOR (NPN)

* TIP125,126,127 Darlington TRANSISTOR (PNP)

1. BASE

2. COLLECTOR

3. EMITTER

TO-220

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

TIP122

TIP127

TIP120

TIP125

TIP121

TIP126

Parameter

Symbol

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

V_CEO

V_EBO

I_C

100

Collector Current -Continuous

P_C

Collector Power Dissipation

R_ӨJA

R_ӨJC

T_J

℃/W

℃

Thermal Resistance Junction to Ambient

Thermal Resistance Junction to Case

Junction Temperature

62.5

1.92

150

T_stg

℃

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Symbol

Test

conditions

MIN

MAX

UNIT

Parameter

TIP120,TIP125

TIP121,TIP126

TIP122,TIP127

100

Collector-base breakdown voltage

V_(BR)CBO

I_C=1mA, I

_E=0

100

TIP120,TIP125

TIP121,TIP126

TIP122,TIP127

Collector-emitter breakdown voltage

Collector cut-off current

V_CEO(SUS)

I_C=30mA, I

_B=0

TIP120,TIP125

TIP121,TIP126

TIP122,TIP127

_CB=60V, I

_CB=80V, I

_E=0

I_CBO

0.2

V_CB=100V, I_E=0

TIP120,TIP125

TIP121,TIP126

TIP122,TIP127

V_CE=30V, I_B=0

Collector cut-off current

I_CEO

V_CE=40V, I_B

0.5

V_CE=50V, I_B=0

V_EB=5V, I_C=0

I_EBO

Emitter cut-off current

DC current gain

h_FE(1)

V_CE=3V, I

_C=0.5A

1000

h_FE(2)

V_{CE (sat)}

V_BE

_C=3A

I_C=3A, I_B=12mA

I_C=5A, I_B=20mA

Collector-emitter saturation voltage

Base-emitter voltage

V_CE=3V, I

_C=3A

2.5

V_CB=10V, I_E=0A

f = 0.1MHz

300

200

TIP125,TIP126,TIP127

TIP120,TIP121,TIP122

Output Capacitance

C_ob

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TIP122-6203	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6226	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP122-6255	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast