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TIP122 PDF预览

TIP122

更新时间: 2024-11-18 12:23:43
品牌 Logo 应用领域
COMSET 晶体晶体管局域网
页数 文件大小 规格书
3页 103K
描述
SILICON DARLINGTON POWER TRANSISTORS

TIP122 数据手册

 浏览型号TIP122的Datasheet PDF文件第2页浏览型号TIP122的Datasheet PDF文件第3页 
NPN TIP120-121-122  
SILICON DARLINGTON POWER TRANSISTORS  
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220  
enveloppe. They are intended for use in power linear and switching applications.  
PNP complements are TIP125-126-127  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Value  
Unit  
V
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
TIP120  
TIP121  
TIP122  
60  
80  
100  
60  
80  
100  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
5
5
V
A
ICM  
Collector Peak Current  
Base Current  
8
A
IB  
120  
65  
2
mA  
@ Tc < 25°  
@ Ta < 25°  
PT  
Power Dissipation  
Watts  
TJ  
Ts  
Junction Temperature  
150  
°C  
Storage Temperature range  
-65 to +150  
05/10/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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