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TIP122-BP PDF预览

TIP122-BP

更新时间: 2024-11-04 08:48:47
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 347K
描述
NPN Silicon Transistors

TIP122-BP 数据手册

 浏览型号TIP122-BP的Datasheet PDF文件第2页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TIP122  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
NPN Silicon  
Transistors  
RoHS Compliant. See ordering information)  
·
·
Darlington configuration in Jedec TO-220 package  
The complementary PNP types are the TIP127 respectively.  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
TO-220  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
ICP  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Peak Collector Current  
Collector Current  
Rating  
100  
100  
5.0  
8.0  
Unit  
V
V
V
A
C
B
S
F
Q
T
IC  
5.0  
A
PC  
TJ  
TSTG  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
65  
W
OC  
OC  
A
-55 to +150  
-55 to +150  
U
1
2
3
H
Electrical Characteristics @ 25OC Unless Otherwise Specified  
K
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
100  
---  
---  
0.2  
2.0  
0.5  
Vdc  
mAdc  
mAdc  
mAdc  
V
L
(IC=30mAdc, I =0)  
J
B
D
ICBO  
Collector-Base Cutoff Current  
(VCB=100Vdc,IE=0)  
Emitter-Base Cutoff Current  
R
G
N
IEBO  
---  
(VEB=5.0Vdc, I =0)  
C
DIMENSIONS  
MIN  
MAX  
.625  
.420  
.190  
ICEO  
Collector-Emitter Cutoff Current  
(VCE=50Vdc, IB=0)  
---  
INCHES  
MIN  
MM  
MAX  
15.88  
NOTE  
DIM  
A
B
C
.560  
.380  
.140  
14.22  
9.65  
3.56  
ON CHARACTERISTICS  
hFE-1  
10.67  
4.82  
Forward Current Transfer Ratio  
(IC=0.5Adc, VCE=3.0Vdc)  
Forward Current Transfer Ratio  
(IC=3.0Adc, VCE=3.0Vdc)  
Collector-Emitter Saturation Voltage  
1000  
1000  
---  
---  
---  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
hFE-2  
G
H
J
.012  
0.30  
VCE(sat)-1  
VCE(sat)-2  
VBE(sat)  
2.0  
4.0  
2.5  
Vdc  
Vdc  
Vdc  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
(IC=3.0Adc, I =12mAdc)  
B
Collector-Emitter Saturation Voltage  
---  
N
.190  
.210  
4.83  
5.33  
(IC=5.0Adc, I =20mAdc)  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
B
Base-Emitter Saturation Voltage  
(IC=3.0Adc, VCE=3.0Adc)  
---  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
.045  
1.15  
www.mccsemi.com  
Revision: 3  
2008/01/01  
1 of 2  

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