Datasheet > TIP122F

TIP122F

更新时间： 2024-09-24 14:48:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2037K
描述
TO-220F

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中文翻译

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数据手册

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TIP122F 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO-220F

1.BASE

TIP122F DARLINGTON TRANSISTOR (NPN)

2.COLLECTOR

3.EMITTER

FEATURES

Medium Power Complementary Silicon Transistors

NPN

R ₁

R ₂

typ. =5 K

_R2typ. =210

R₁

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XXXX=Code

TIP122F

XXXX

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Unit

Value

100

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

P_C

R_θJA

R_θJC

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

62.5

1.92

℃/W

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

www.jscj-elec.com

Rev. - 2.2

12 3 4

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