Datasheet > TIP122FP_09

TIP122FP_09

更新时间： 2024-11-04 12:19:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
11页	646K
描述
Complementary power Darlington transistors

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TIP122FP_09 数据手册

TIP122FP

TIP127FP

Complementary power Darlington transistors

Features

■ Low collector-emitter saturation voltage

■ Complementary NPN - PNP transistors

■ TO-220FP isolated package UL compliant

Application

■ General purpose linear and switching

TO-220FP

Description

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration. The resulting

transistors show exceptional high gain

performance coupled with very low saturation

voltage.

Figure 1.

Internal schematic diagrams

NPN: R = 7 kΩ

PNP: R = 16 kΩ

R = 70 Ω

R = 60 Ω

Table 1.

Device summary

Order codes

Marking

Polarity

Package

TO-220FP

Packaging

TIP122FP

TIP127FP

TIP122FP

TIP127FP

NPN

PNP

Tube

December 2009

Doc ID 5309 Rev 5

1/11

www.st.com

12 3 4 5 6 7...11

中文翻译

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