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TIP122FP_03 PDF预览

TIP122FP_03

更新时间: 2024-11-21 04:28:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 279K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP122FP_03 数据手册

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TIP122FP  
TIP127FP  
®
COMPLEMENTARY SILICON POWER  
DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
FULLY INSULATED PACKAGE (U.L.  
COMPLIANT) FOR EASY MOUNTING  
DESCRIPTION  
The TIP122FP is a silicon Epitaxial-Base NPN  
power transistor in monolithic Darlington  
configuration mounted in Jedec TO-220FP fully  
molded isolated package. It is intented for use in  
power linear and switching applications.  
3
2
1
The complementary PNP type is TIP127FP.  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
R1 Typ. = 5 KΩ  
R2 Typ. = 150 Ω  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
TIP122FP  
TIP127FP  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
100  
100  
5
V
V
V
A
A
A
5
ICM  
Collector Peak Current (tp < 5 ms)  
8
IB  
Base Current  
0.1  
o
Ptot  
29  
2
W
W
Total Dissipation at Tcase 25 C  
o
Tamb 25 C  
Visol  
Insulation Withstand Voltage (RMS) from All  
Three Leads to External Heatsink  
Storage Temperature  
1500  
V
Tstg  
Tj  
-65 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
March 2003  

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