Datasheet > TIP122FP_03

TIP122FP_03

更新时间： 2024-11-04 04:28:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管达林顿晶体管
页数	文件大小	规格书
6页	279K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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数据手册

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TIP122FP_03 数据手册

TIP122FP

TIP127FP

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

■

STMicroelectronics PREFERRED

SALESTYPES

FULLY INSULATED PACKAGE (U.L.

COMPLIANT) FOR EASY MOUNTING

DESCRIPTION

The TIP122FP is a silicon Epitaxial-Base NPN

power transistor in monolithic Darlington

configuration mounted in Jedec TO-220FP fully

molded isolated package. It is intented for use in

power linear and switching applications.

The complementary PNP type is TIP127FP.

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

R₁Typ. = 5 KΩ

R₂Typ. = 150 Ω

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

PNP

TIP122FP

TIP127FP

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

100

I_CM

Collector Peak Current (t_p< 5 ms)

I_B

Base Current

0.1

P_tot

Total Dissipation at T_case≤ 25 C

T_amb≤ 25 C

V_isol

Insulation Withstand Voltage (RMS) from All

Three Leads to External Heatsink

Storage Temperature

1500

T_stg

T_j

-65 to 150

150

^oC

Max. Operating Junction Temperature

For PNP types voltage and current values are negative.

1/6

March 2003

12 3 4 5 6

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