Datasheet > TIP122F

TIP122F

更新时间： 2024-11-18 04:28:27

品牌	Logo	应用领域
CDIL		晶体晶体管达林顿晶体管
页数	文件大小	规格书
3页	214K
描述
NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

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中文翻译

获取价格

技术参数
数据手册

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TIP122F 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.75	最大集电极电流 (IC)：	5 A
配置：	DARLINGTON	最小直流电流增益 (hFE)：	1000
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	65 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

TIP122F 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

TIP122F NPN

TIP127F PNP

TO-220FP

Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

100

5.0

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current -Continuous

Collector Current (Peak)

Base Current

ICM

8.0

120

Total Power Dissipation @ Tc=25 deg C

Derate Above 25 deg C

Total Power Dissipation @ Ta=25 deg C

Derate Above 25 deg C

Unclamped Inductive Load Energy (1)

Junction Temperature

Storage Temperature Range

THERMAL RESISTANCE

From Junction to Ambient

From Junction to Case

0.52

2.0

0.016

150

W/deg C

deg C

Tstg

-65 to +150

Rth(j-a)

Rth(j-c)

62.5

1.92

deg C/W

(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

Collector Emitter (sus) Voltage

Collector Cut off Current

SYMBOL

VCEO (sus) * IC=100mA, IB=0

ICBO

ICEO

IEBO

VCE(Sat)*

TEST CONDITION

MIN

100

MAX

UNIT

VCB=100V, IE=0

IB=O, VCE=50V

VEB=5V,IC=0

IC=3A, IB=12mA

IC=5A, IB=20mA

IC=3A, VCE=3V

IC=0.5A, VCE=3V

IC=3A, VCE=3V

0.2

0.5

2.0

4.0

2.5

Emitter Cut off Current

Collector Emitter Saturation Voltage

Base Emitter on Voltage

DC Current Gain

VBE(on) *

hFE*

1.0

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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