Datasheet > TIP122_11

TIP122_11

更新时间： 2024-11-18 08:48:47

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
2页	401K
描述
NPN Silicon Transistors

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中文翻译

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数据手册

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TIP122_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

TIP122

Micro Commercial Components

Features

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

NPN Silicon

Transistors

RoHS Compliant. See ordering information)

Darlington configuration in Jedec TO-220 package

The complementary PNP types are the TIP127 respectively.

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-220

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_CP

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Peak Collector Current

Collector Current

Rating

100

5.0

8.0

Unit

I_C

5.0

P_C

T_J

T_STG

Collector power dissipation

Junction Temperature

Storage Temperature

^OC

-55 to +150

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage

100

---

0.2

2.0

0.5

Vdc

mAdc

(I_C=30mAdc, I =0)

I_CBO

Collector-Base Cutoff Current

(V_CB=100Vdc,I_E=0)

Emitter-Base Cutoff Current

I_EBO

---

(V_EB=5.0Vdc, I =0)

DIMENSIONS

MIN

MAX

.625

.420

.190

I_CEO

Collector-Emitter Cutoff Current

(V_CE=50Vdc, I_B=0)

---

INCHES

MIN

MAX

15.88

NOTE

DIM

.560

.380

.140

14.22

9.65

3.56

ON CHARACTERISTICS

h_FE-1

10.67

4.82

Forward Current Transfer Ratio

(I_C=0.5Adc, V_CE=3.0Vdc)

Forward Current Transfer Ratio

(I_C=3.0Adc, V_CE=3.0Vdc)

Collector-Emitter Saturation Voltage

1000

---

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

h_FE-2

.012

0.30

V_CE(sat)-1

V_CE(sat)-2

V_BE(sat)

2.0

4.0

2.5

Vdc

.500

.045

.580

.060

12.70

1.14

14.73

1.52

(I_C=3.0Adc, I =12mAdc)

Collector-Emitter Saturation Voltage

---

.190

.210

4.83

5.33

(I_C=5.0Adc, I =20mAdc)

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

Base-Emitter Saturation Voltage

(I_C=3.0Adc, V_CE=3.0Adc)

---

Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.

.045

1.15

www.mccsemi.com

Revision: A

2011/01/01

1 of 2

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与TIP122_11相关器件

型号	品牌	获取价格	描述	数据表
TIP122_15	UTC	获取价格	NPN EPITAXIAL TRANSISTOR
TIP12216	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6203	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6226	RENESAS	获取价格	8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP122-6255	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6258	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6261	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6263	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122-6264	RENESAS	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP122A	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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