JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN)
TO-220F
TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP)
1.BASE
2.COLLECTOR
3.EMITTER
FEATURES
Medium Power Complementary Silicon Transistors
1
2
3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
TIP120F
TIP125F
TIP121F
TIP126F
TIP122F
TIP127F
Unit
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
60
60
80
100
100
V
V
Collector-Emitter Voltage
80
Emitter-Base Voltage
5
5
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
A
PC
2
W
RθJA
RθJC
TJ
62.5
1.92
150
℃/W
℃/W
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
60
Max
Unit
Collector-base breakdown voltage
TIP120F,TIP125F
TIP121F,TIP126F V(BR)
TIP122F,TIP127F
IC= 1mA,IE=0
80
100
60
V
CBO
Collector-emitter breakdown voltage TIP120F,TIP125F
TIP121F,TIP126F VCEO(SUS) IC= 30mA,IB=0
TIP122F,TIP127F
80
100
V
Collector cut-off current
Collector cut-off current
TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
VCB= 60 V, IE=0
VCB= 80 V, IE=0
VCB= 100V, IE=0
VCE=30 V, IB=0
VCE=40 V, IB=0
ICBO
0.2
mA
ICEO
0.5
2
mA
mA
VCE=50 V, IB=0
Emitter cut-off current
DC current gain
IEBO
hFE(1)
hFE(2)
VEB=5 V, IC=0
VCE= 3V, IC=0.5A
VCE= 3V, IC=3 A
1000
1000
IC=3A,IB=12mA
IC=5 A,IB=20mA
2
4
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
VCE=3V, IC=3 A
2.5
Output Capacitance
TIP125F,TIP126F,TIP127F
TIP120F,TIP121F,TIP122F
300
200
Cob
VCB=10V, IE=0,f=0.1MHz
pF
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1
D,May,2016