Datasheet > TIM6472-35SL_06

TIM6472-35SL_06

更新时间： 2022-09-19 10:48:42

品牌	Logo	应用领域
东芝 - TOSHIBA		微波
页数	文件大小	规格书
4页	472K
描述
MICROWAVE POWER GaAs FET

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TIM6472-35SL_06 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM6472-35SL

TECHNICAL DATA

FEATURES

n LOW INTERMODULATION DISTORTION

n HIGH GAIN

IM3=-45 dBc at Pout= 35.0dBm

G1dB=8.0dB at 6.4GHz to 7.2GHz

Single Carrier Level

n HIGH POWER

n BROADBAND INTERNALLY MATCHED

n HERMETICALLY SEALED PACKAGE

P1dB=45.5dBm at 6.4GHz to 7.2GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 45.0 45.5

VDS= 10V

f = 6.4 to 7.2GHz

G1dB

7.0

8.0

IDS1

h_add

IM3

8.0

9.0

±0.8

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

-45

Two Tone Test

Po=35.0dBm

dBc

-42

(Single Carrier Level)

Drain Current

IDS2

8.0

9.0

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

Channel Temperature Rise

DTch

100

Recommended Gate Resistance(Rg) : 28 W (Max.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

Transconductance

= 3V

= 10.5A

6500

-2.5

Pinch-off Voltage

VGSoff

IDSS

VDS= 3V

IDS= 140mA

VDS= 3V

VGS= 0V

-1.0

-4.0

Saturated Drain Current

-5

IGS= -420 A

Gate-Source Breakdown

Voltage

VGSO

Rth(c-c)

C/W

Thermal Resistance

Channel to Case

1.0

1.3

u The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jul., 2006

12 3 4

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