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TC7SG17FU(TE85L) PDF预览

TC7SG17FU(TE85L)

更新时间: 2024-11-21 15:53:59
品牌 Logo 应用领域
东芝 - TOSHIBA 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
6页 150K
描述
IC,LOGIC GATE,BUFFER,CMOS,TSSOP,5PIN,PLASTIC

TC7SG17FU(TE85L) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP5/6,.08Reach Compliance Code:unknown
风险等级:5.92JESD-30 代码:R-PDSO-G5
负载电容(CL):30 pF逻辑集成电路类型:BUFFER
最大I(ol):0.0003 A端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP5/6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
电源:1.2/3.3 VProp。Delay @ Nom-Sup:58.1 ns
认证状态:Not Qualified施密特触发器:YES
子类别:Gates表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.635 mm
端子位置:DUALBase Number Matches:1

TC7SG17FU(TE85L) 数据手册

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TC7SG17FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SG17FU  
Schmitt Buffer  
Features  
High output current  
:±8 mA (min) at V  
= 3 V  
CC  
Super high speed operation : t = 3.7 ns (typ.)  
pd  
at V  
= 3.3 V,15pF  
CC  
Operating voltage range  
5.5-V tolerant input.  
: V  
= 0.9 to 3.6 V  
CC  
3.6-V power down protection output.  
Weight: 0.006 g (typ.)  
Marking  
Pin Assignment (top view)  
Product name  
NC  
1
2
3
5
4
V
CC  
W L  
IN A  
GND  
OUT Y  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 4.6  
V
V
CC  
DC input voltage  
V
0.5 to 7.0  
IN  
0.5 to 4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5 to V  
+ 0.5 (Note 2)  
CC  
20  
20  
Input diode current  
Output diode current  
DC output current  
I
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
(Note 3)  
OK  
I
±25  
±50  
200  
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
D
Storage temperature  
T
65 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: V  
= 0V  
CC  
Note 2: High or Low State. Do not exceed IOUT of absolute maximum ratings.  
Note 3: V < GND  
OUT  
1
2009-09-18  

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