Datasheet > TC7SG17FU(TE85L,F)

TC7SG17FU(TE85L,F)

更新时间： 2024-02-25 04:41:25

品牌	Logo	应用领域
东芝 - TOSHIBA		栅光电二极管逻辑集成电路触发器
页数	文件大小	规格书
6页	145K
描述
Schmitt Trigger Buffer 1-CH Non-Inverting CMOS 5-Pin SSOP T/R

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技术参数
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TC7SG17FU(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TSSOP, TSSOP5/6,.08	Reach Compliance Code：	unknown
风险等级：	5.82	JESD-30 代码：	R-PDSO-G5
负载电容（CL）：	30 pF	逻辑集成电路类型：	BUFFER
最大I（ol）：	0.0003 A	端子数量：	5
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP5/6,.08	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	包装方法：	TAPE AND REEL
电源：	1.2/3.3 V	Prop。Delay @ Nom-Sup：	58.1 ns
认证状态：	Not Qualified	施密特触发器：	YES
子类别：	Gates	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	0.635 mm
端子位置：	DUAL	Base Number Matches：	1

TC7SG17FU(TE85L,F) 数据手册

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TC7SG17FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG17FU

Schmitt Buffer

Features

•

High output current

:±8 mA (min) at V

= 3 V

Super high speed operation : t = 3.7 ns (typ.)

at V

= 3.3 V,15pF

•

Operating voltage range

5.5-V tolerant input.

: V

= 0.9 to 3.6 V

3.6-V power down protection output.

Weight: 0.006 g (typ.)

Marking

Pin Assignment (top view)

Product name

W L

IN A

GND

OUT Y

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 4.6

DC input voltage

−0.5 to 7.0

−0.5 to 4.6 (Note 1)

DC output voltage

OUT

−0.5 to V

+ 0.5 (Note 2)

−20

Input diode current

Output diode current

DC output current

°C

(Note 3)

±25

±50

200

OUT

DC V /ground current

Power dissipation

Storage temperature

−65 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: V

= 0V

Note 2: High or Low State. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V < GND

OUT

2009-09-18

12 3 4 5 6

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