生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC55V8512JI-12 | TOSHIBA |
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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55V8512JI-15 | TOSHIBA |
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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55VBM316AFTN | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55VBM316AFTN40 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55VBM316AFTN55 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55VBM316ASGN40 | TOSHIBA |
获取价格 |
IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, S | |
TC55VBM316ASGN55 | TOSHIBA |
获取价格 |
IC 512K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, S | |
TC55VBM316ASTN40 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55VBM316ASTN55 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55VBM316ATGN55 | TOSHIBA |
获取价格 |
IC 512K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, S |