是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOJ | 包装说明: | SOJ, |
针数: | 40 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.B | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 6 ns |
JESD-30 代码: | R-PDSO-J40 | JESD-609代码: | e0 |
长度: | 26.04 mm | 内存密度: | 1048576 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 40 |
字数: | 131072 words | 字数代码: | 128000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 128KX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOJ |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 3.7 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 宽度: | 10.16 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC55NEM208A | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM208AFGN70 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 70 ns, PDSO32, 0.525 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, S | |
TC55NEM208AFGV70 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 100 ns, PDSO32, 0.525 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, | |
TC55NEM208AFPN | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM208AFPN55 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM208AFPN70 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM208AFPV | TOSHIBA |
获取价格 |
524,288-WORD BY 8-BIT STATIC RAM | |
TC55NEM208AFPV55 | TOSHIBA |
获取价格 |
524,288-WORD BY 8-BIT STATIC RAM | |
TC55NEM208AFPV70 | TOSHIBA |
获取价格 |
524,288-WORD BY 8-BIT STATIC RAM | |
TC55NEM208AFTN | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |