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TC55NEM216ASGV55 PDF预览

TC55NEM216ASGV55

更新时间: 2024-11-21 20:05:31
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 211K
描述
IC 256K X 16 STANDARD SRAM, 85 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-44, Static RAM

TC55NEM216ASGV55 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2, TSOP44,.46,32针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:85 ns其他特性:IT ALSO OPERATES WITH 4.5V TO 5.5V; ACCESS TIME=55NS
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000003 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.035 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

TC55NEM216ASGV55 数据手册

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TC55NEM216ASGV55,70  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
Lead-Free  
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55NEM216ASGV is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by  
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.7 to  
5.5 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of  
3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1.8 µA standby  
current (typ) when chip enable ( CE ) is asserted high or chip select (CS) is asserted low. There are three control  
inputs. CE is used to select the device and for data retention control, and output enable (OE ) provides fast  
memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to  
various microprocessor system applications where high speed, low power and battery backup are required. And,  
with a guaranteed operating extreme temperature range of 40° to 85°C, the TC55NEM216ASGV can be used in  
environments exhibiting extreme temperature conditions. The TC55NEM216ASGV is available in a plastic 44-pin  
thin-small-outline package (TSOP).  
FEATURES  
Low-power dissipation  
Access Times (maximum):  
Operating: 15 mW/MHz (typical)  
Single power supply voltage of 2.7 to 5.5 V  
Power down features using CE  
5 V ± 10%  
55 70  
2.7 V~5.5 V  
55 70  
Data retention supply voltage of 2.0 to 5.5 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of 40° to 85°C  
Standby Current (maximum): 20 µA  
Access Time  
CE Access Time  
OE Access Time  
Package:  
55 ns 70 ns 85 ns 100 ns  
55 ns 70 ns 85 ns 100 ns  
30 ns 35 ns 60 ns 70 ns  
TSOP II44-P-400-0.80  
(Weight:0.47 g typ)  
Lead-Free  
PIN ASSIGNMENT (TOP VIEW)  
44 PIN TSOP  
PIN NAMES  
A4  
A3  
A2  
A1  
A0  
CE  
I/O1  
I/O2  
I/O3  
I/O4 10  
VDD 11  
GND 12  
I/O5 13  
I/O6 14  
I/O7 15  
I/O8 16  
R/W 17  
A15 18  
A14 19  
A13 20  
A12 21  
A16 22  
1
2
3
4
5
6
7
8
9
44 A5  
43 A6  
42 A7  
A0~A17  
CE  
Address Inputs  
Chip Enable  
Chip Select  
41  
40  
39  
OE  
UB  
LB  
CS  
38 I/O16  
37 I/O15  
36 I/O14  
35 I/O13  
34 GND  
33 VDD  
32 I/O12  
31 I/O11  
30 I/O10  
29 I/O9  
28 CS  
R/W  
Read/Write Control  
Output Enable  
OE  
LB , UB  
Data Byte Control  
I/O1~I/O16 Data Inputs/Outputs  
V
Power  
DD  
27 A8  
26 A9  
25 A10  
24 A11  
23 A17  
GND  
NC  
Ground  
No Connection  
2004-12-14 1/12  

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