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TC55NEM216ATGN70 PDF预览

TC55NEM216ATGN70

更新时间: 2024-11-21 21:09:31
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 205K
描述
IC 256K X 16 STANDARD SRAM, 70 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-54, Static RAM

TC55NEM216ATGN70 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.8最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G54
长度:22.22 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:54
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000003 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.035 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

TC55NEM216ATGN70 数据手册

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TC55NEM216ATGN55,70  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
Lead-Free  
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55NEM216ATGN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by  
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ±  
10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3  
mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1.8 µA standby  
current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device  
and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB ,  
UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications  
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme  
temperature range of 40° to 85°C, the TC55NEM216ATGN can be used in environments exhibiting extreme  
temperature conditions. The TC55NEM216ATGN is available in a plastic 54-pin thin-small-outline package  
(TSOP).  
FEATURES  
Low-power dissipation  
Access Times (maximum):  
Operating: 15 mW/MHz (typical)  
Single power supply voltage of 5 V ± 10%  
Power down features using CE  
TC55NEM216ATGN  
55  
70  
Data retention supply voltage of 2.0 to 5.5 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of 40° to 85°C  
Standby Current (maximum): 20 µA  
Access Time  
55 ns  
55 ns  
30 ns  
70 ns  
70 ns  
35 ns  
CE Access Time  
OE Access Time  
Package:  
TSOP II54-P-400-0.80  
(Weight:0.57 g typ)  
Lead-Free  
PIN ASSIGNMENT (TOP VIEW)  
54 PIN TSOP  
PIN NAMES  
A0~A17  
CE  
Address Inputs  
Chip Enable  
NC  
A3  
1
2
3
4
5
6
7
8
9
54 A4  
53 A5  
A2  
52 A6  
51 A7  
A1  
A0  
I/O16  
I/O15  
VDD  
GND  
I/O14 10  
I/O13 11  
R/W  
Read/Write Control  
Output Enable  
50 NC  
49 I/O1  
48 I/O2  
47 VDD  
46 GND  
45 I/O3  
44 I/O4  
OE  
LB , UB  
Data Byte Control  
I/O1~I/O16 Data Inputs/Outputs  
12  
13  
43  
42  
UB  
CE  
LB  
OE  
V
Power (+5 V)  
Ground  
DD  
OP 14  
R/W 15  
I/O12 16  
I/O11 17  
GND 18  
VDD 19  
41 OP  
40 NC  
39 I/O5  
38 I/O6  
37 GND  
36 VDD  
35 I/O7  
34 I/O8  
33 A8  
GND  
NC  
No Connection  
Option  
I/O10 20  
I/O9 21  
NC 22  
A17 23  
A16 24  
A15 25  
A14 26  
A13 27  
OP*  
*: OP pin must be open or connected to GND.  
32 A9  
31 A10  
30 A11  
29 A12  
28 NC  
2004-10-14 1/11  

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