是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP2 | 包装说明: | 0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32 |
针数: | 32 | Reach Compliance Code: | unknown |
风险等级: | 5.86 | Is Samacsys: | N |
最长访问时间: | 55 ns | JESD-30 代码: | R-PDSO-G32 |
JESD-609代码: | e0 | 长度: | 20.95 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP2 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 240 | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC55NEM208AFTN70 | TOSHIBA |
获取价格 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM208AFTV55 | TOSHIBA |
获取价格 |
524,288-WORD BY 8-BIT STATIC RAM | |
TC55NEM208AFTV70 | TOSHIBA |
获取价格 |
524,288-WORD BY 8-BIT STATIC RAM | |
TC55NEM208ATGN55 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 55 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T | |
TC55NEM208ATGN70 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 70 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T | |
TC55NEM208ATGV55 | TOSHIBA |
获取价格 |
IC 512K X 8 STANDARD SRAM, 85 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T | |
TC55NEM216AFTN55 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM216AFTN70 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | |
TC55NEM216ASGV55 | TOSHIBA |
获取价格 |
IC 256K X 16 STANDARD SRAM, 85 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, | |
TC55NEM216ASTV55 | TOSHIBA |
获取价格 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |