5秒后页面跳转
TC55NEM208AFTN55 PDF预览

TC55NEM208AFTN55

更新时间: 2024-09-27 23:14:51
品牌 Logo 应用领域
东芝 - TOSHIBA 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 109K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM208AFTN55 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:0.400 INCH, 1.27 MM PITCH, PLASTIC, TSOP2-32
针数:32Reach Compliance Code:unknown
风险等级:5.86Is Samacsys:N
最长访问时间:55 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.95 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

TC55NEM208AFTN55 数据手册

 浏览型号TC55NEM208AFTN55的Datasheet PDF文件第2页浏览型号TC55NEM208AFTN55的Datasheet PDF文件第3页浏览型号TC55NEM208AFTN55的Datasheet PDF文件第4页浏览型号TC55NEM208AFTN55的Datasheet PDF文件第5页浏览型号TC55NEM208AFTN55的Datasheet PDF文件第6页浏览型号TC55NEM208AFTN55的Datasheet PDF文件第7页 
TC55NEM208AFPN/AFTN55,70  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
524,288-WORD BY 8-BIT STATIC RAM  
DESCRIPTION  
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288  
words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a  
single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating  
current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA  
standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select  
the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is well  
suited to various microprocessor system applications where high speed, low power and battery backup are required.  
And, with a guaranteed operating range of 40° to 85°C, the TC55NEM208AFPN/AFTN can be used in  
environments exhibiting extreme temperature conditions. The TC55NEM208AFPN/AFTN is available in a  
standard plastic 32-pin small-outline package (SOP) and normal and reverse pinout plastic 32-pin  
thin-small-outline package (TSOP).  
FEATURES  
Access Times (maximum):  
TC55NEM208AFPN/AFTN  
Low-power dissipation  
Operating: 15 mW/MHz (typical)  
Single power supply voltage of 5 V ± 10%  
Power down features using CE .  
Data retention supply voltage of 2.0 to 5.5 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of 40° to 85°C  
Standby Current (maximum):20 µA  
55  
70  
Access Time  
CE Access Time  
OE Access Time  
Package:  
55 ns  
55 ns  
30 ns  
70 ns  
70 ns  
35 ns  
SOP32-P-525-1.27 (AFPN)  
TSOP II32-P-400-1.27 (AFTN) (Weight:  
(Weight:  
g typ)  
g typ)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
32 PIN SOP & TSOP  
A0~A18  
R/W  
Address Inputs  
Read/Write Control  
Output Enable  
Chip Enable  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
I/O1 13  
I/O2 14  
I/O3 15  
GND 16  
1
2
3
4
5
6
7
8
9
32 VDD  
31 A15  
30 A17  
29 R/W  
28 A13  
27 A8  
OE  
CE  
I/O1~I/O8  
Data Inputs/Outputs  
Power (+5 V)  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O8  
20 I/O7  
19 I/O6  
18 I/O5  
17 I/O4  
V
DD  
GND  
Ground  
(AFPN/AFTN)  
2002-09-18 1/10  

与TC55NEM208AFTN55相关器件

型号 品牌 获取价格 描述 数据表
TC55NEM208AFTN70 TOSHIBA

获取价格

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTV55 TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFTV70 TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208ATGN55 TOSHIBA

获取价格

IC 512K X 8 STANDARD SRAM, 55 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T
TC55NEM208ATGN70 TOSHIBA

获取价格

IC 512K X 8 STANDARD SRAM, 70 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T
TC55NEM208ATGV55 TOSHIBA

获取价格

IC 512K X 8 STANDARD SRAM, 85 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T
TC55NEM216AFTN55 TOSHIBA

获取价格

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216AFTN70 TOSHIBA

获取价格

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM216ASGV55 TOSHIBA

获取价格

IC 256K X 16 STANDARD SRAM, 85 ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC,
TC55NEM216ASTV55 TOSHIBA

获取价格

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS