Datasheet > TC55NEM208A

TC55NEM208A

更新时间： 2024-02-14 22:56:25

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
10页	109K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TC55NEM208A 数据手册

TC55NEM208AFPN/AFTN55,70

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

524,288-WORD BY 8-BIT STATIC RAM

DESCRIPTION

The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288

words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a

single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating

current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA

standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select

the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is well

suited to various microprocessor system applications where high speed, low power and battery backup are required.

And, with a guaranteed operating range of −40° to 85°C, the TC55NEM208AFPN/AFTN can be used in

environments exhibiting extreme temperature conditions. The TC55NEM208AFPN/AFTN is available in a

standard plastic 32-pin small-outline package (SOP) and normal and reverse pinout plastic 32-pin

thin-small-outline package (TSOP).

FEATURES

•

Access Times (maximum):

TC55NEM208AFPN/AFTN

•

Low-power dissipation

Operating: 15 mW/MHz (typical)

•

Single power supply voltage of 5 V ± 10%

Power down features using CE .

Data retention supply voltage of 2.0 to 5.5 V

Direct TTL compatibility for all inputs and outputs

Wide operating temperature range of −40° to 85°C

Standby Current (maximum):20 µA

Access Time

CE Access Time

OE Access Time

Package:

55 ns

30 ns

70 ns

35 ns

•

SOP32-P-525-1.27 (AFPN)

TSOP II32-P-400-1.27 (AFTN) (Weight:

(Weight:

g typ)

PIN ASSIGNMENT (TOP VIEW)

PIN NAMES

32 PIN SOP & TSOP

A0~A18

R/W

Address Inputs

Read/Write Control

Output Enable

Chip Enable

A18

A16

A14

A12

A2 10

A1 11

A0 12

I/O1 13

I/O2 14

I/O3 15

GND 16

32 VDD

31 A15

30 A17

29 R/W

28 A13

27 A8

I/O1~I/O8

Data Inputs/Outputs

Power (+5 V)

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O8

20 I/O7

19 I/O6

18 I/O5

17 I/O4

GND

Ground

(AFPN/AFTN)

2002-09-18 1/10

12 3 4 5 6 7...10

中文翻译

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与TC55NEM208A相关器件

型号	品牌	获取价格	描述	数据表
TC55NEM208AFGN70	TOSHIBA	获取价格	IC 512K X 8 STANDARD SRAM, 70 ns, PDSO32, 0.525 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, S
TC55NEM208AFGV70	TOSHIBA	获取价格	IC 512K X 8 STANDARD SRAM, 100 ns, PDSO32, 0.525 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC,
TC55NEM208AFPN	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN55	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPN70	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPV	TOSHIBA	获取价格	524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFPV55	TOSHIBA	获取价格	524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFPV70	TOSHIBA	获取价格	524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFTN	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN55	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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