5秒后页面跳转
TC55NEM208AFPN55 PDF预览

TC55NEM208AFPN55

更新时间: 2024-02-11 13:23:49
品牌 Logo 应用领域
东芝 - TOSHIBA 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
10页 109K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TC55NEM208AFPN55 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.525 INCH, 1.27 MM PITCH, PLASTIC, SOP-32
针数:32Reach Compliance Code:unknown
风险等级:5.86Is Samacsys:N
最长访问时间:55 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.6 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):240认证状态:Not Qualified
座面最大高度:2.8 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.7 mmBase Number Matches:1

TC55NEM208AFPN55 数据手册

 浏览型号TC55NEM208AFPN55的Datasheet PDF文件第2页浏览型号TC55NEM208AFPN55的Datasheet PDF文件第3页浏览型号TC55NEM208AFPN55的Datasheet PDF文件第4页浏览型号TC55NEM208AFPN55的Datasheet PDF文件第5页浏览型号TC55NEM208AFPN55的Datasheet PDF文件第6页浏览型号TC55NEM208AFPN55的Datasheet PDF文件第7页 
TC55NEM208AFPN/AFTN55,70  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
524,288-WORD BY 8-BIT STATIC RAM  
DESCRIPTION  
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288  
words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a  
single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating  
current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 1 µA  
standby current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select  
the device and for data retention control, and output enable ( OE ) provides fast memory access. This device is well  
suited to various microprocessor system applications where high speed, low power and battery backup are required.  
And, with a guaranteed operating range of 40° to 85°C, the TC55NEM208AFPN/AFTN can be used in  
environments exhibiting extreme temperature conditions. The TC55NEM208AFPN/AFTN is available in a  
standard plastic 32-pin small-outline package (SOP) and normal and reverse pinout plastic 32-pin  
thin-small-outline package (TSOP).  
FEATURES  
Access Times (maximum):  
TC55NEM208AFPN/AFTN  
Low-power dissipation  
Operating: 15 mW/MHz (typical)  
Single power supply voltage of 5 V ± 10%  
Power down features using CE .  
Data retention supply voltage of 2.0 to 5.5 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of 40° to 85°C  
Standby Current (maximum):20 µA  
55  
70  
Access Time  
CE Access Time  
OE Access Time  
Package:  
55 ns  
55 ns  
30 ns  
70 ns  
70 ns  
35 ns  
SOP32-P-525-1.27 (AFPN)  
TSOP II32-P-400-1.27 (AFTN) (Weight:  
(Weight:  
g typ)  
g typ)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
32 PIN SOP & TSOP  
A0~A18  
R/W  
Address Inputs  
Read/Write Control  
Output Enable  
Chip Enable  
A18  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
I/O1 13  
I/O2 14  
I/O3 15  
GND 16  
1
2
3
4
5
6
7
8
9
32 VDD  
31 A15  
30 A17  
29 R/W  
28 A13  
27 A8  
OE  
CE  
I/O1~I/O8  
Data Inputs/Outputs  
Power (+5 V)  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O8  
20 I/O7  
19 I/O6  
18 I/O5  
17 I/O4  
V
DD  
GND  
Ground  
(AFPN/AFTN)  
2002-09-18 1/10  

与TC55NEM208AFPN55相关器件

型号 品牌 获取价格 描述 数据表
TC55NEM208AFPN70 TOSHIBA

获取价格

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFPV TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFPV55 TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFPV70 TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFTN TOSHIBA

获取价格

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN55 TOSHIBA

获取价格

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTN70 TOSHIBA

获取价格

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55NEM208AFTV55 TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208AFTV70 TOSHIBA

获取价格

524,288-WORD BY 8-BIT STATIC RAM
TC55NEM208ATGN55 TOSHIBA

获取价格

IC 512K X 8 STANDARD SRAM, 55 ns, PDSO32, 0.400 INCH, 1.27 MM PITCH, LEAD FREE, PLASTIC, T