Datasheet > STWA40N95DK5

STWA40N95DK5

更新时间： 2023-12-20 18:44:41

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	378K
描述
N沟道950 V、0.120 Ohm典型值、38 A MDmesh DK5功率MOSFET，TO-247长引线封装

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STWA40N95DK5 数据手册

STW40N95DK5, STWA40N95DK5

Electrical characteristics

Table 7. Source-drain diode

Symbol

Parameter

Source-drain current

Test conditions

Min.

Typ. Max. Unit

152

1.5

(1)

Source-drain current (pulsed)

Forward on voltage

SDM

(2)

= 38 A, V = 0 V

= 19 A, di/dt = 100 A/µs,

= 60 V

Reverse recovery time

Reverse recovery charge

170

1.4

µC

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

Reverse recovery current

RRM

= 19 A, di/dt = 100 A/µs,

= 60 V, T = 150 °C

Reverse recovery time

340

Reverse recovery charge

µC

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

Reverse recovery current

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

DS9918 - Rev 5

page 4/14

1 2 345 6 7...14

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