STPS745

更新时间： 2024-11-11 22:53:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
7页	84K
描述
POWER SCHOTTKY RECTIFIER

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中文翻译

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数据手册

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STPS745 数据手册

STPS745D/F/G

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

7.5 A

45 V

Tj (max)

V_F(max)

175 °C

0.57 V

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLESWITCHING LOSSES

EXTREMELYFAST SWITCHING

TO-220AC

STPS745D

ISOWATT220AC

STPS745F

INSULATEDPACKAGE: ISOWATT220AC

Insulatingvoltage = 2000V DC

Capacitance= 12pF

DESCRIPTION

Single Schottky rectifier suited for Switch Mode

Power Supply and high frequency DC to DC con-

verters.

D²PAK

STPS745G

Packaged either in TO-220AC, ISOWATT220AC

or D²PAK, this device is intended for use in low

voltage, high frequency inverters, free wheeling

and polarityprotectionapplications.

ABSOLUTE RATINGS

(limiting values)

Symbol

Parameter

Value

Unit

V_RRM

Repetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

Average forward current

TO-220AC /

D²PAK

Tc = 160°C

7.5

= 0.5

ISOWATT220AC Tc = 145°C

I_FSM

Surgenon repetitive forward

current

tp = 10 ms sinusoidal

150

I_RRM

I_RSM

Repetitive peak reverse current

tp = 2 s square F = 1kHz

Non repetitivepeak reverse

current

tp = 100 µs square

Tstg

Storage temperature range

- 65 to + 175

175

°C

Maximum operatingjunction temperature*

Critical rate of rise of reverse voltage

dV/dt

dPtot

dTj

10000

V/µs

* :

thermal runawayconditionfor a diode on its own heatsink

Rth(j−a)

June 1999 - Ed: 4D

1/7

12 3 4 5 6 7

中文翻译

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