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STPS640CT PDF预览

STPS640CT

更新时间: 2024-11-11 22:53:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
6页 78K
描述
POWER SCHOTTKY RECTIFIER

STPS640CT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.56其他特性:FREEWHEELING DIODE
应用:POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:75 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大重复峰值反向电压:40 V最大反向电流:10000 µA
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STPS640CT 数据手册

 浏览型号STPS640CT的Datasheet PDF文件第2页浏览型号STPS640CT的Datasheet PDF文件第3页浏览型号STPS640CT的Datasheet PDF文件第4页浏览型号STPS640CT的Datasheet PDF文件第5页浏览型号STPS640CT的Datasheet PDF文件第6页 
STPS640CT/CF/CB  
POWER SCHOTTKY RECTIFIER  
MAIN PRODUCT CHARACTERISTICS  
A1  
IF(AV)  
VRRM  
2 x 3 A  
40 V  
K
A2  
Tj (max)  
VF (max)  
150 °C  
0.57 V  
K
FEATURESAND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLESWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD DROP VOLTAGE  
LOW CAPACITANCE  
A2  
A1  
DPAK  
STPS640CB  
LOW THERMAL RESISTANCE  
INSULATEDPACKAGE:  
Insulatingvoltage = 2000V DC  
Capacitance= 12pF  
SMD PACKAGE (tapeand reel option: -TR)  
A2  
DESCRIPTION  
K
A2  
A1  
K
Dual Schottky rectifier suited to Switch Mode  
Power Suppliesand other Power Converters.  
A1  
ISOWATT220AB  
STPS640CF  
This device is intended for use in low and medium  
voltage operation, and particulary, in high fre-  
quency circuitries where low switching losses are  
required (free wheeling and polarity protection).  
TO-220AB  
STPS640CT  
ABSOLUTE RATINGS (limiting values, per diode)  
Symbol  
Parameter  
Value  
40  
10  
6
Unit  
VRRM Repetitivepeak reverse voltage  
IF(RMS) RMS forward current  
V
A
TO-220AB/ ISOWATT220AB  
DPAK  
IF(AV) Average forward current δ = 0.5  
TO-220AB  
ISOWATT220AB Tc = 130°C  
DPAK Tc = 120°C  
tp = 10 ms Sinusoidal  
Tc = 135°C  
3
A
IFSM  
IRRM  
Tstg  
Tj  
Surge non repetitive forward current  
Repetitivepeak reverse current  
Storage temperaturerange  
75  
1
A
A
µ
tp = 2 s F = 1kHz square  
- 65 to + 150 °C  
Maximum operatingjunction temperature  
150  
°C  
µ
V/ s  
dV/dt Critical rate of rise of reverse voltage  
10000  
August 1999 - Ed: 4A  
1/6  

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