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STP08IE120F4 PDF预览

STP08IE120F4

更新时间: 2024-09-09 03:11:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
11页 279K
描述
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm

STP08IE120F4 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SFM包装说明:ROHS COMPLIANT, TO-220FP, 4 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):8 A配置:SINGLE WITH BUILT-IN FET AND DIODE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220
JESD-30 代码:R-PSFM-T4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):245
极性/信道类型:NPN最大功率耗散 (Abs):21 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP08IE120F4 数据手册

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STP08IE120F4  
Emitter Switched Bipolar Transistor  
ESBT 1200 V - 8 A - 0.10  
Preliminary Data  
General features  
V
I
R
CS(ON)  
CS(ON)  
C
0.8 V  
8 A  
0.10  
High voltage / high current Cascode  
configuration  
Low equivalent on resistance  
very fast-switch up to 150 kHz  
Squared RBSOA up to 1200V  
Very low C driven by R = 47  
TO220FP-4L  
iss  
G
Very low turn-off cross over time  
Internal schematic diagrams  
Applications  
Aux SMPS for three phase mains  
Description  
The STP08IE120F4 is manufactured in Monolithic  
ESBT Technology, aimed to provide best perfor-  
mances in high frequency / high voltage applica-  
tions.  
It is designed for use in Gate Driven based topolo-  
gies.  
Order codes  
Part Number  
Marking  
Package  
Packing  
STP08IE120F4  
P08IE120F4  
TO220FP-4L  
Tube  
November 2006  
Rev 1  
1/11  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
11  

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