STN2907AS

更新时间： 2024-11-16 08:59:15

品牌	Logo	应用领域
可天士 - KODENSHI		晶体小信号双极晶体管
页数	文件大小	规格书
4页	273K
描述
PNP Silicon Transistor

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中文翻译

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数据手册

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STN2907AS 数据手册

STN2907AS

PNP Silicon Transistor

Descriptions

PIN Connection

• General purpose application

• Switching application

Features

• Large collector current

• Low collector saturation voltage

• Complementary pair with STN2222AS

SOT-23

Ordering Information

Type NO.

Marking

Package Code

WA □

① ②

STN2907AS

SOT-23

① Device Code ② Year&Week Code

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-60

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

-50

-5

-600

350

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

* : Package mounted on 99.5% Alumina 10×8×0.1mm.

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=-10μA, I_E=0

-60

-50

-5

I_C=-10mA, I_B=0

I_E=-10μA, I_C=0

-10

V_CB=-60V, I_E=0

DC current gain

h_FE

V_CE=-10V, I_C=-10mA

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-150mA, I_B=-15mA

V_CE=-20V, I_C=-20mA

V_CB=-10V, I_E=0, f=1MHz

-0.4

250

MHz

Collector output capacitance

C_ob

6.0

KSD-T5C035-000

12 3 4

中文翻译

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